Drive unit

ABSTRACT

A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor, and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 15/451,821 filed on Mar. 7, 2017 which claims priority toJapanese Patent Application No. 2016-046211 filed on Mar. 9, 2016, theentire contents of which are hereby incorporated by reference.

BACKGROUND 1. Technical Field

The technology disclosed in this specification relates to a drive unitthat drives a transistor to be driven, based on a drive signal.

2. Description of Related Art

An inverter or a voltage converter includes a device for switching apower transistor (transistor to be driven) for electric powerconversion, between ON and OFF, based on a drive signal, namely, a driveunit that drives the power transistor.

Japanese Patent Application Publication No. 2009-111470 (JP 2009-111470A) discloses a drive unit that is able to adjust the speed (which willbe called “switching speed”) of switching a power transistor between ONand OFF, using a current mirror circuit. The drive unit disclosed in JP2009-111470 A reduces the switching speed when the power transistor isnot required to perform high-speed operation, so as to suppress orreduce switching noise of the power transistor.

The current mirror circuit may be of a type using N-channel transistors,or of a type using P-channel transistors. In the following, a currentmirror circuit using N-channel transistors will be described by way ofexample. In the current mirror circuit, the gates of two transistorshaving the same gate threshold voltage are connected to each other, anda high-potential-side electrode of one of the transistors is connectedto the gate of the transistor. A current source that causes constantcurrent (reference current) to flow is connected to thehigh-potential-side electrode of the above-indicated one of thetransistors. In the following, one of the two transistors of the currentmirror circuit, to which the current source is connected, will be called“first transistor”, and the other transistor will be called “secondtransistor”.

When the current mirror circuit is used in the drive unit, one ofhigh-potential-side electrode and low-potential-side electrode of thesecond transistor corresponds to an output terminal of the drive unit,to which the gate of the power transistor is connected. One of ahigh-voltage terminal that raises the voltage of the gate of the powertransistor to the ON voltage, and a low-voltage terminal that reducesthe gate voltage to the OFF voltage is connected to the other of thehigh-potential-side electrode and low-potential-side electrode of thesecond transistor. When the reference current flows, the first andsecond transistors of the current mirror circuit are placed in the ONstate, and electric current is allowed to flow between the gate of thepower transistor and the high-voltage terminal (or the low-voltageterminal). If the reference current is stopped, and the gate voltage ofthe transistors of the current mirror circuit is lowered, the first andsecond transistors are placed in the OFF state, and the gate of thepower transistors is disconnected from the high-voltage terminal (or thelow-voltage terminal).

In the current mirror circuit, electric current proportional to thereference current flows through the second transistor. If the referencecurrent is reduced, the current that flows through the second transistorwhen it is in the ON state is reduced, and the rate of change of thegate voltage of the power transistor is reduced. As a result, theswitching speed of the power transistor is reduced. The drive unit of JP2009-111470 A adjusts the switching speed of the power transistor(transistor to be driven), by adjusting the magnitude of the referencecurrent.

SUMMARY

In the current mirror circuit of the drive unit, voltage-driven typetransistors having small electric power consumption are employed. Thevoltage-driven type transistor is switched between ON and OFF when itsgate is charged and discharged. In the current mirror circuit usingN-channel transistors, the gates of the first and second transistors areconnected to each other, and a high-potential-side electrode of thefirst transistor is also connected to the gates. A current source isconnected to the high-potential-side electrode of the first transistor,and the gates of the two transistors (the first transistor and thesecond transistor) are charged with reference current delivered by thecurrent source. In the following description, the first transistor andthe second transistor may be simply called “first and secondtransistors”. The drive unit starts charging the gates of the twotransistors with the reference current, in response to a trigger (e.g.,a pulse edge) of a drive signal. If the reference current is small, thegate charging speed of the transistors of the current mirror circuit isreduced. As a result, it takes a substantial time from receiving of thetrigger of the drive signal to switching of the transistors of thecurrent mirror circuit from OFF to ON. In the current mirror circuitusing P-channel transistors, the gate and low-potential-side electrodeof the first transistor are connected to each other, and dischargecurrent of the gates of both of the first and second transistors islimited to the magnitude of the reference current. If the referencecurrent is small, the gate discharging speed of the transistors of thecurrent mirror circuit is reduced. As a result, it takes a substantialtime from receiving of the trigger of the drive signal to switching ofthe transistors of the current mirror circuit from OFF to ON. Namely, inthe drive unit using the current mirror circuit, it takes some responsetime from the time when a trigger of the drive signal is received to thetime when the gate voltage of the transistor to be driven is changed. Ifthe reference current is increased, the response becomes faster, butelectric power consumption of the first transistor is increased.

This specification is related to a drive unit using a current mirrorcircuit, and provides a technology of shortening response time from thetime when a trigger of a drive signal is received to the time when atransistor to be driven is driven, without increasing electric powerconsumption of a first transistor. In the following description,“trigger of drive signal” will be simply referred to as “drive signal”.Namely, this specification provides the technology of shortening theresponse time from receiving of the drive signal to driving of thetransistor to be driven.

Initially, a drive unit in which voltage-driven type N-channeltransistors are employed in a current mirror circuit will be described.A drive unit of a first aspect disclosed in this specification includesa first transistor that is a voltage-driven type N-channel transistor,and has a high-potential-side electrode and a gate connected to eachother, and a second transistor that is a voltage-driven type N-channeltransistor, and has the same gate threshold voltage as the firsttransistor. The second transistor has a gate connected to the gate ofthe first transistor, and a high-potential-side electrode and alow-potential-side electrode to one of which a gate of the transistor tobe driven is connected. The drive unit further includes a current sourcethat is connected to the high-potential-side electrode of the firsttransistor, and is adapted to deliver constant current, a currentcontrol circuit configured to control start of charging of the gates ofthe first transistor and the second transistor using the current source,in response to the drive signal, and a gate charge circuit that chargesthe gates of the first transistor and the second transistor, separatelyfrom the current source. The gate charge circuit includes configurationof a first charge circuit.

The first charge circuit includes a capacitor having one electrodeconnected to the gates of the first transistor and the secondtransistor, a charge terminal that supplies electric power to the otherelectrode of the capacitor, a discharge terminal that dischargeselectric power from the other electrode of the capacitor, and a chargeswitch configured to switch a destination to which the other electrodeof the capacitor is connected, from the discharge terminal to the chargeterminal, in response to the drive signal. The first charge circuitsatisfies a relationship of the following expression (1):Vref≥Vcg·Ccg/(Ccg+Ccm)  (1)where Vref is an output terminal voltage of the current source when theconstant current flows between the high-potential-side electrode and thelow-potential-side electrode of the first transistor, Ccg is acapacitance of the capacitor, Ccm is a total capacitance of gatecapacitances of the first transistor and the second transistor, and Vcgis a voltage of the charge terminal.

A drive unit of a second aspect disclosed in this specification includesa first transistor that is a voltage-driven type N-channel transistor,and has a high-potential-side electrode and a gate connected to eachother, and a second transistor that is a voltage-driven type N-channeltransistor, and has the same gate threshold voltage as the firsttransistor. The second transistor has a gate connected to the gate ofthe first transistor, and a high-potential-side electrode and alow-potential-side electrode to one of which a gate of the transistor tobe driven is connected. The drive unit further includes a current sourcethat is connected to the high-potential-side electrode of the firsttransistor, and is adapted to deliver constant current, a currentcontrol circuit configured to control start of charging of the gates ofthe first transistor and the second transistor using the current source,in response to the drive signal, and a gate charge circuit that chargesthe gates of the first transistor and the second transistor, separatelyfrom the current source. The gate charge circuit includes configurationof a second charge circuit.

The second charge circuit includes a charge terminal that supplieselectric power to the gates of the first transistor and the secondtransistor, a diode having an anode connected to the charge terminal,and a cathode connected to the gates of the first transistor and thesecond transistor, and a charge switch configured to switch a connectingstate between the charge terminal, and the first transistor and thesecond transistor, from a cutoff state to a conducting state, inresponse to the drive signal. The second charge circuit satisfies arelationship of the following expression (2):Vref≥Vcg−Vf  (2)where Vref is an output terminal voltage of the current source when theconstant current flows between the high-potential-side electrode and thelow-potential-side electrode of the first transistor, Vf is a forwardvoltage of the diode, and Vcg is a voltage of the charge terminal.

In the drive unit of the first aspect and second aspect, in response tothe drive signal, the current control circuit starts charging the gatesof the first and second transistors, using the current source, and thegate charge circuit starts charging the gates of the first and secondtransistors. Since electric power is supplied from not only the currentsource but also the gate charge circuit, the charging time of the gatesof the first and second transistors is shortened. With the gate chargecircuit thus provided, the response time from receiving of the drivesignal to switching of the first and second transistors from OFF to ONis reduced. Namely, the response time from receiving of the drive signalto driving of the transistor to be driven is reduced.

With electric power supplied from the current source and the gate chargecircuit, the gate voltage of the first and second transistors isincreased. The right side (Vcg·Ccg/(Ccg+Ccm)) of the above expression(1) and the right side (Vcg−Vf) of the above expression (2) representthe maximum value of the gate voltage when it is assumed that the gatesof the first and second transistors are charged only with the voltageVcg of the charge terminal. Accordingly, when the gate voltage reaches[Vcg·Ccg/(Ccg+Ccm)], or the gate voltage reaches [Vcg−Vf], no moreelectric power can be supplied from the gate charge circuit. Namely,supply of electric power from the gate charge circuit is automaticallystopped. Thereafter, electric power is supplied only from the currentsource. The gate voltage of the first and second transistors continuesto rise due to supply of electric power from the current source, and thegate voltage of the first and second transistors exceeds the gatethreshold voltage firth. Namely, the first and second transistors switchfrom OFF to ON. Then, constant current (current upper-limit value Idmax)of the current source flows between the high-potential-side electrodeand low-potential-side electrode of the first transistor. The outputterminal voltage of the current source is adjusted to be equal to thevoltage Vref when the constant current flows between thehigh-potential-side electrode and low-potential-side electrode of thefirst transistor, and its magnitude is set to a value that is higherthan the gate threshold voltage Vth. The first and second transistorsswitch from OFF to ON by the time when the gate voltage reaches theoutput terminal voltage Vref, and the gate voltage finally reaches theoutput terminal voltage Vref. At this time, the constant current(current upper limit value Idmax) of the current source flows betweenthe high-potential-side electrode and low-potential-side electrode ofthe first transistor. In other words, the current flowing between thehigh-potential-side electrode and low-potential-side electrode of thefirst transistor does not exceed the constant current of the currentsource.

In the drive unit disclosed in this specification, the gates of thefirst and second transistors are rapidly charged by the gate chargecircuit, in an initial rise period of the gate voltage, and the time(response time) from receiving of the drive signal to switching of thefirst and second transistors from OFF to ON is shortened. Meanwhile,supply of electric power from the gate charge circuit is stopped in themiddle of gate charging. The gate voltage finally reaches the outputterminal voltage Vref of the current source, and the current flowingbetween the high-potential-side electrode and low-potential-sideelectrode of the first transistor becomes equal to the constant value(current upper-limit value Idmax). In the following description, thecurrent flowing between the high-potential-side electrode andlow-potential-side electrode of the transistor may be called “maincurrent”. In the drive unit disclosed in this specification, after thefirst and second transistors switch from OFF to ON, the main current ofthe first transistor is limited to the constant current (currentupper-limit value Idmax) delivered by the current source. Therefore, thefirst transistor is only required to permit flow of current having thecurrent upper-limit value Idmax. This drive unit can increase the speedof gate charging of the first and second transistors, without increasingthe main current of the first transistor, namely, without increasingelectric power consumed by the first transistor. Namely, this drive unitcan reduce the response time from receiving of the drive signal todriving of the transistor to be driven, without increasing the electricpower consumption.

In the case of the first charge circuit, which uses the capacitor thatsatisfies the relationship of the above expression (1), supply ofelectric power from the first charge circuit is automatically stopped,by the time when the main current of the first transistor reaches theconstant value (current upper-limit value Idmax). In the case of thesecond charge circuit, which satisfies the relationship of the aboveexpression (2), supply of electric power from the second charge circuitis automatically stopped, by the time when the main current of the firsttransistor reaches the constant value (current upper-limit value Idmax).In the case of the second charge circuit, the diode as described aboveis provided, so that counter flow of current from the current source tothe second charge circuit is prevented after the gate voltage exceeds[Vcg−Vf]. Also, when the expression (1) or the expression (2) in whichthe equal sign is used is satisfied, the gate charge circuit is stoppedat the time when the main current of the first transistor reaches theconstant value (current upper-limit value Idmax).

In the drive unit of the first aspect, the gate charge circuit maysatisfy a relationship of the following expression (3):Vcg·Ccg/(Ccg+Ccm)≥Vth  (3)where Ccg is the capacitance of the capacitor, Ccm is the totalcapacitance of the gate capacitances of the first and secondtransistors, Vcg is the voltage of the charge terminal, and Vth is agate threshold voltage of the first and second transistors.

Also, in the drive unit of the second aspect, the gate charge circuitmay satisfy a relationship of the following expression (4):Vcg−Vf≥Vth  (4)where Vf is the forward voltage, Vcg is the voltage of the chargeterminal, and Vth is a gate threshold voltage of the first and secondtransistors.

The relationships of the above expression (3) and expression (4) meanthat the gate voltage of the first and second transistors exceeds thegate threshold voltage during charging by the gate charge circuit.Namely, if the relationships of the above expression (3) and expression(4) are satisfied, the first and second transistors can be switched fromOFF to ON during rapid charging by the gate charge circuit. The firstcharge circuit that satisfies the expression (3) and the second chargecircuit that satisfies the expression (4) can farther shorten time ittakes from receiving of the drive signal to switching of the first andsecond transistors from OFF to ON (namely, time it takes from receivingof the drive signal to driving of the power transistor), withoutincreasing the power consumption of the first transistor.

In the drive unit of the first aspect and second aspect, the currentcontrol circuit may be a switch circuit that is configured to switch theconnecting state between the gates of the first and second transistorsand the discharge terminal (ground terminal) from the conducting stateto the cutoff state, in response to the drive signal that switches thefirst transistor from OFF to ON. The current control circuit may also bea circuit that switches the current source from the output stopped stateto the output state, in response to the drive signal. In the formercase, the current source may deliver constant current at all times. Thisis because the power supplied from the current source is dischargedthrough the switch circuit, and the gates are not charged. However, inthe circuit of the former case, the output power of the current sourceis wasted while the first transistor is OFF, in the case of the circuitof the latter case, on the other hand, the current source is kept in theoutput stopped state while the drive signal indicates that the firsttransistor is OFF; therefore, electric power will not be wasted.

Next, a drive unit in which voltage-driven type P-channel transistorsare employed in a current mirror circuit will be described. A drive unitof a third aspect of the disclosure disclosed in this specificationincludes a first transistor that is a voltage-driven type P-channeltransistor, and has a low-potential-side electrode and a gate connectedto each other, and a second transistor that is a voltage-driven typeP-channel transistor, and has the same gate threshold voltage as thefirst transistor. The second transistor has a gate connected to the gateof the first transistor, and a high-potential-side electrode and alow-potential-side electrode to one of which a gate of the transistor tobe driven is connected. The drive unit further includes a current sourcethat is connected to the low-potential-side electrode of the firsttransistor, and is adapted to allow constant current to passtherethrough, a current control circuit configured to control start ofdischarging of the gates of the first transistor and the secondtransistor using the current source, in response to the drive signal,and a gate discharge circuit that discharges the gates of the firsttransistor and the and second transistor, separately from the currentsource. The gate discharge circuit includes configuration of a firstdischarge circuit.

The first discharge circuit includes a capacitor having one electrodeconnected to the gates of the first transistor and the secondtransistor, a charge terminal that supplies electric power to the otherelectrode of the capacitor, a discharge terminal that dischargeselectric power from the other electrode of the capacitor, and a chargeswitch configured to switch a destination to which the other electrodeof the capacitor is connected, from the charge terminal to the dischargeterminal, in response to the drive signal. The first discharge circuitsatisfies a relationship of the following expression (5):dVcg·Ccm/(Ccg+Ccm)≥VLref  (5)where VLref is an input terminal voltage of the current source when theconstant current flows between the high-potential-side electrode and thelow-potential-side electrode of the first transistor, Ccg is acapacitance of the capacitor, Ccm is a total capacitance of gatecapacitances of the first transistor and the second transistor, and dVcgis a voltage difference between an electric power supply terminal thatsupplies electric power to the gates of the first transistor and thesecond transistor, and the discharge terminal.

A drive unit of a fourth aspect of the disclosure disclosed in thisspecification includes a first transistor that is a voltage-driven typeP-channel transistor, and has a low-potential-side electrode and a gateconnected to each other, and a second transistor that is avoltage-driven type P-channel transistor, and has the same gatethreshold voltage as the first transistor. The second transistor has agate connected to the gate of the first transistor, and ahigh-potential-side electrode and a low-potential-side electrode to oneof which a gate of the transistor to be driven is connected. The driveunit further includes a current source that is connected to thelow-potential-side electrode of the first transistor, and is adapted toallow constant current to pass therethrough, a current control circuitconfigured to control start of discharging of the gates of the firsttransistor and the second transistor using the current source, inresponse to the drive signal, and a gate discharge circuit thatdischarges the gates of the first transistor and the and secondtransistor, separately from the current source. The gate dischargecircuit includes configuration of a second discharge circuit.

The second discharge circuit includes a discharge terminal thatdischarges electric power from the gates of the first transistor and thesecond transistor, a diode having an anode connected to the gates of thefirst transistor and the second transistor, and a cathode connected tothe discharge terminal, and a discharge switch configured to switch aconnecting state between the discharge terminal, and the firsttransistor and the second transistor, from a cutoff state to aconducting state, in response to the drive signal. The second dischargecircuit satisfies a relationship of the following expression (6);VLcg+Vf≥VLref  (6)where VLref is an input terminal voltage of the current source when theconstant current flows between the high-potential-side electrode and thelow-potential-side electrode of the first transistor, Vf is a forwardvoltage of the diode, and VLcg, is a voltage of the discharge terminal.

In the drive unit of the third aspect and fourth aspect including thegate discharge circuit that is the first discharge circuit or the seconddischarge circuit, in response to the drive signal, the current controlcircuit starts discharging the gates of the first and secondtransistors, using the current source, and the gate discharge circuitstarts discharging the gates of the first and second transistors.Through the current source and the gate discharge circuit, the gates ofthe first and second transistors are quickly discharged. Thus, the timeit takes from receiving of the drive signal to switching of the firstand second transistors from OFF to ON can be shortened, and thetransistor to be driven is driven with better response.

As the gate discharge proceeds, the gate voltage of the first and secondtransistors is lowered. The left side [dVcg·Ccm/(Ccg+Ccm)] of the aboveexpression (5) and the left side [VLcg+Vf] of the above expression (6)represent the lowest value of the gate voltage when it is assumed thatthe gates of the first and second transistors are discharged only withthe gate discharge circuit. Accordingly, if the gate voltage of thefirst and second transistors is lowered to [dVcg·Ccm/(Ccg+Ccm)] or[VLcg+Vf], discharge through the gate discharge circuit is automaticallystopped, and the gates are discharged only through the current source.Thereafter, the gate voltage continues to be lowered by dischargethrough the current source, and becomes constant at the input terminalvoltage VLref of the current source. The input terminal voltage VLref ofthe current source is set to be lower than the gate threshold voltageVth, and the first and second transistors switch from OFF to ON by thetime when the gate voltage reaches the input terminal voltage VLref. Theinput terminal voltage of the current source is adjusted to be equal toVLref when current of a constant value (current upper-limit value Idmax)flows between the high-potential-side electrode and low-potential-sideelectrode of the first transistor. Namely, after the first and secondtransistors switch from OFF to ON, the main current of the firsttransistor is limited to the constant value (current upper-limit valueIdmax). Therefore, the first transistor is only required to allow flowof main current having the current upper-limit value Idmax. The driveunit including the current mirror circuit in which P-channel transistorsare employed is also able to shorten time (response time) from receivingof the drive signal to driving of the transistor to be driven, withoutincreasing the main current of the first transistor, namely, withoutincreasing the electric power consumption.

In the case of the first discharge circuit, which uses the capacitorthat satisfies the relationship of the above expression (5), dischargeby the first discharge circuit is automatically stopped, by the timewhen the main current of the first transistor reaches the constant value(current upper-limit value Idmax). In the case of the second dischargecircuit, which satisfies the relationship of the above expression (6),discharge by the second discharge circuit is automatically stopped, bythe time when the main current of the first transistor reaches theconstant value (current upper-limit value Idmax). In the case of thesecond discharge circuit, the diode as described above is provided, sothat counter low of current from the second discharge circuit to thecurrent source is prevented after the gate voltage becomes lower than“VLcg+Vf”. Also, when the expression (5) or the expression (6) in whichthe equal sign is used is satisfied, the gate discharge circuit isstopped at a point in time at which the main current of the firsttransistor reaches the constant value (current upper-limit value Idmax).

In the drive unit of the third aspect, the gate discharge circuit it maysatisfy a relationship of the following expression (7):Vth≥DVcg·Ccm/(Ccg+Ccm)  (7)where Ccg is the capacitance of the capacitor, am is the totalcapacitance of the gate capacitances of the first and secondtransistors, dVcg is the voltage difference, and Vth is a gate thresholdvoltage of the first and second transistors.

In the drive unit of the fourth aspect, the gate discharge circuit itmay satisfy a relationship of the following expression (8):Vth≥VLcg+Vf  (8)where Vf is the forward voltage, VLcg is the voltage, and Vth is a gatethreshold voltage of the first and second transistors.

The relationships of the above expression (7) and expression (8) meanthat the gate voltage of the first and second transistors becomes lowerthan the gate threshold voltage during discharging by the gate dischargecircuit. Namely, if the relationships of the above expression (7) andexpression (8) are satisfied, the first and second transistors switchfrom OFF to ON during discharging by the gate discharge circuit. Thefirst discharge circuit that satisfies the expression (7) and the seconddischarge circuit that satisfies the expression (8) can further shortenresponse time, without increasing the power consumption of the firsttransistor.

In both of the drive unit including the current mirror circuit using theP-channel transistors, and the drive unit including the current mirrorcircuit using the N-channel transistors, a cutoff switch may be providedfor cutting off current (main current) flowing between thehigh-potential-side electrode and the low-potential-side electrode ofthe first transistor after the first transistor and the secondtransistor switch from OFF to ON. In a general current mirror circuit,reference current continues to flow as the main current of the firsttransistor, even after the first and second transistors switch from OFFto ON. Even if the main current of the first transistor is cut off afterswitching of the first and second transistors from OFF to ON, the firstand second transistors are held in the ON state. With the main currentof the first transistor thus cut off after switching of the first andsecond transistors from OFF to ON, no current flows through the firsttransistor after cutoff of the main current, and power consumption canbe further suppressed or reduced. Details of the technology disclosed inthis specification and further improvements will be described below in“DETAILED DESCRIPTION OF EMBODIMENTS”.

BRIEF DESCRIPTION OF THE DRAWINGS

Features, advantages, and technical and industrial significance ofexemplary embodiments will be described below with reference to theaccompanying drawings, in which like numerals denote like elements, andwherein:

FIG. 1 is a block diagram of a drive unit of a first embodiment;

FIG. 2 is a time chart of the drive unit of the first embodiment;

FIG. 3 is a time chart of the case where no gate charge circuit isprovided;

FIG. 4 is a block diagram of a drive unit of a second embodiment;

FIG. 5 is a block diagram of a drive unit of a third embodiment;

FIG. 6 is a block diagram of a drive unit of a fourth embodiment;

FIG. 7 is a time chart of the drive unit of the fourth embodiment;

FIG. 8 is a block diagram of a drive unit of a fifth embodiment;

FIG. 9 is a block diagram of a drive unit of a sixth embodiment;

FIG. 10 is a block diagram of a drive unit of a seventh embodiment;

FIG. 11 is a time chart of the drive unit of the seventh embodiment;

FIG. 12 is a block diagram of a drive unit of an eighth embodiment;

FIG. 13 is a block diagram of a drive unit of a ninth embodiment;

FIG. 14 is a time chart of the drive unit of the ninth embodiment;

FIG. 15 is another time chart of the drive unit of the ninth embodiment;

FIG. 16 is a block diagram of a drive unit of a tenth embodiment;

FIG. 17 is a time chart of the drive unit of the tenth embodiment;

FIG. 18 is a block diagram of a drive unit of an eleventh embodiment;and

FIG. 19 is a time chart of the drive unit of the eleventh embodiment.

DETAILED DESCRIPTION OF EMBODIMENTS First Embodiment

Referring to FIG. 1 and FIG. 2, a drive unit of a first embodiment willbe described. FIG. 1 is a block diagram of the drive unit 10 a. FIG. 2is a time chart showing operation of the drive unit 10 a. The drive unit103 is a unit or system for driving a power transistor 99. The powertransistor 99 is a switching device used for converting electric power.For example, the power transistor 99 is a switching device of aninverter that converts direct current into alternating current, or aswitching device of a voltage converter. A power conversion systemincluding the power transistor 99 is not illustrated in the drawings,except for the power transistor 99. When the power conversion systemincludes two or more power transistors, the drive unit 10 a is preparedfor each of the power transistors.

The drive unit 10 a switches the power transistor 99 between ON and OFF,based on a pulsed drive signal Vin1 received from a high-order controlunit (not shown). The drive unit 10 a drives the power transistor 99,using a pulse edge of the drive signal Vin1 as a trigger. When the drivesignal Vin1 is at a low level (“Low” in FIG. 2), the drive unit 10 aholds the power transistor 99 in the ON state. When the drive signalVin1 switches from the low level to a high level (“High” in FIG. 2), thedrive unit 10 a switches the power transistor 99 from ON to OFF. Here,“ON” means a conducting state in which electric current is allowed toflow between a high-potential-side electrode and a low-potential-sideelectrode of a transistor, and “OFF” means a current cutoff state inwhich flow of electric current between the high-potential-side electrodeand low-potential-side electrode of the transistor is cut off orinhibited.

The drive unit 10 a switches first and second transistors 1 a, 2 a fromOFF to ON, using a pulse edge at which the drive signal Vin1 switchesfrom the low level to the high level, as a trigger, as will be describedin detail later. In the following, operation to switch the first andsecond transistors 1 a, 2 a from OFF to ON will be mainly described.While a phrase “in response to the drive signal Vin1” often appears inthe following description, this phase specifically means that “inresponse to the drive signal Vin1, which is a drive signal that switchesthe power transistor 99 (transistor to be driven) between ON and OFF,and switches the first and second transistors 1 a, 2 a from OFF to ON”.

The drive unit 10 a includes an input terminal 11 and an output terminal12. The above-mentioned high-order control unit is connected to theinput terminal 11, and the input terminal 11 receives the drive signalVin1. A gate of the power transistor 99 to be driven by the drive unit10 a is connected to the output terminal 12.

The drive unit 10 a includes six transistors, i.e., first transistor isthrough sixth transistor 6 a. The first transistor 1 a, secondtransistor 2 a, third transistor 3 a, and the fifth transistor 5 a areN-channel MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors),and the fourth transistor 4 a and the sixth transistor 6 a are P-channelMOSFETs. The MOSFET has a gate that is insulated from a source and adrain, and is of a so-called voltage driven type, namely, whether theMOSFET is ON or OFF is determined based on the magnitude of the gatevoltage. While the N-channel MOSFET is configured to be accompanied by adiode that constantly passes current from the source to the drain, thediode is not illustrated in FIG. 1 and other drawings. While theP-channel MOSFET is configured to be accompanied by a diode thatconstantly passes current from the drain to the source, the diode is notillustrated in FIG. 1 and other drawings. In this connection, a flywheeldiode for transistor protection may be connected to each transistor.

Some power-supply positive terminals 31-33 and some power-supplynegative terminals 41-43, 40 are provided inside the drive unit 10 a.The power-supply positive terminals 31-33 are terminals that supplyelectric power to respective devices, and the power-supply negativeterminals 41-43, 49 correspond to discharge terminals of electriccurrent that flows out of respective devices. The voltage of eachpower-supply positive terminal and the voltage of each power-supplynegative terminal are determined by a power-supply circuit (not shown).The power-supply negative terminals 41-43, 49 may correspond to theground terminal of the drive unit 10 a, or may be held at a voltageobtained by adding a given bias to the voltage of the ground terminal ofthe drive unit 10 a. The power-supply positive terminals 31-33 may beheld at the same voltage, or may be held at different voltages.

The power-supply positive terminal 31 is held at art ON voltage VCC1 ofthe power transistor 99. The power-supply negative terminal 41 is heldat an OFF voltage of the power transistor 99. The power-supply positiveterminals 32, 33 will be described later.

The drive unit 10 a includes a NOT device 13 (inverter), capacitor 16,current source 17, resistor 18, and a current control circuit 21, inaddition to the six transistors 1 a-6 a as described above. The firsttransistor 1 a and the second transistor 2 a constitute a current mirrorcircuit 15 a, and the fourth transistor 4 a, fifth transistor 5 a, andthe capacitor 16 constitute a gate charge circuit 14 a.

The output terminal 12 of the drive unit 10 a is connected to thepower-supply positive terminal 31, via the sixth transistor 6 a and theresistor H. More specifically, the source of the sixth transistor 6 a isconnected to the power-supply positive terminal 31, and the drain isconnected to the output terminal 12 via the resistor 18. The secondtransistor 2 a is connected between the output terminal 12, and thepower-supply negative terminal 41. The drain of the second transistor 2a is connected to the output terminal 12, and the source is connected tothe power-supply negative terminal 41. When the sixth transistor 6 a isturned on, and the second transistor 2 a is turned off, the gate voltageof the power transistor 99 is raised to the voltage VCC1 of thepower-supply positive terminal 31, and the power transistor 99 is turnedon. When the sixth transistor 6 a is turned off, and the secondtransistor 2 a is turned on, the gate voltage of the power transistor 99is lowered to the voltage of the power-supply negative terminal 41, andthe power transistor 99 is turned off.

The gate of the sixth transistor 6 a is connected to the input terminal11, and the sixth transistor 6 a is switched between ON and OFF, inresponse to the drive signal Vin1 received by the input terminal 11. Thesixth transistor 6 a functions as a switch circuit that selectivelyallows and inhibits or cuts off current flow between the power-supplypositive terminal 31 and the output terminal 12 (the gate of the powertransistor 99). The sixth transistor 6 a selectively allows and inhibitscurrent flow between the power-supply positive terminal 31 and theoutput terminal 12, in response to the drive signal Vin1 received by theinput terminal 11. While a current mirror circuit that will be describedbelow may be employed as a switch circuit that selectively allows andinhibits current flow between the power-supply positive terminal 31 andthe output terminal 12, the switch circuit of this embodiment is simplyrepresented by a single transistor (sixth transistor 6 a), for the sakeof easy understanding of the drawings. The sixth transistor 6 a isquickly switched by a pulse edge of the drive signal Vin1 received bythe input terminal 11. The response, or a length of time it takes fromthe time when the drive signal Vin1 is received to the time when thepower transistor 99 is driven, depends on operation of the currentmirror circuit 15 a that will be described below.

The second transistor 2 a and the first transistor 1 a constitute thecurrent mirror circuit 15 a, and the second transistor 2 a is switchedbetween ON and OFF according to ON/OFF of the first transistor 1 a.Transistors having the same gate threshold voltage Vth are employed asthe first transistor 1 a and the second transistor 2 a.

The current mirror circuit 15 a will be described. As described above,each of the first transistor 1 a and the second transistor 2 a is avoltage-driven type N-channel transistor. The drain corresponds to ahigh-potential-side electrode, and the source corresponds to alow-potential-side electrode. As described above, the second transistor2 a is connected between the output terminal 12 and the power-supplynegative terminal 41. The drain (high-potential-side electrode) of thesecond transistor 2 a is connected to the output terminal 12. Asdescribed above, the gate of the power transistor 99 is connected to theoutput terminal 12. The drain of the first transistor 1 a is connectedto the gate. The source of the first transistor 1 a is connected to thepower-supply negative terminal 42. The gate of the first transistor 1 ais connected to the gate of the second transistor 2 a.

The drain of the third transistor 3 a is connected to the gates of thefirst and second transistors 1 a, 2 a. The source of the thirdtransistor 3 a is connected to the power-supply negative terminal 49.The third transistor 3 a is provided for discharging the gates of thefirst and second transistors 1 a, 2 a through the power-supply negativeterminal 49. The gate of the third transistor 3 a is connected to theinput terminal 11 via the NOT device 13. Therefore, the gate of thethird transistor 3 a receives a signal (inversion signal Vin1 x)obtained by inverting the low and high levels of the drive signal Vin1.The third transistor 3 a discharges the gates of the first and secondtransistors 1 a, 2 a, in response to the drive signal Vin1 received bythe input terminal 11.

The current source 17 is connected to the drain (high-potential-sideelectrode) of the first transistor 1 a, and the power-supply positiveterminal 32 to which voltage VCC2 is supplied is connected to thecurrent source 17. A current control circuit 21 is connected to thecurrent Source 17. The current control circuit 21 receives the drivesignal Vin1. The current control circuit 21 switches the current source17 between an output stopped state and a current output state, inresponse to the drive signal Vin1. More specifically, when the drivesignal Vin1 is at the low level, the current control circuit 21 holdsthe current source 1 in the output stopped state. When the drive signalVin1 switches from the low level to the high level, the current controlcircuit 21 turns the current source 17 into the current output state.The current source 17, when it is in the output state, is supplied withelectric power from the power-supply positive terminal 32, and deliversa predetermined constant current. (current upper-limit value Idmax). Theoutput terminal voltage of the current source 17 is adjusted so as to beequal to a predetermined voltage Vref when the first transistor 1 a isplaced in the ON state, and the constant current (current upper-limitvalue Idmax) flows between the drain and source of the first transistor1 a. During a transition period from the output stopped state to thetime when the current source 17 stably delivers the constant current(current upper-limit value Idmax), the output terminal voltage graduallychanges from zero to the voltage Vref. In the following description,current that flows between a drain and a source of a transistor will becalled “drain current” or “main current”.

When the current control circuit 21 switches the current source 17 fromthe output stopped state to the output state, in response to the drivesignal Vin1, electric power starts being supplied from the currentsource 17 to the gates of the first and second transistors 1 a, 2 a (thegates start being charged).

The gate charge circuit 14 a is connected to the drain of the firsttransistor 1 a, and the gates of the first and second transistors 1 a, 2a. The gate charge circuit 14 a charges the gates of the first andsecond transistors 1 a, 2 a, separately from the current source 17. Thegate charge circuit 14 a consists of the power-supply positive terminal33 held at a voltage Vcg, corresponding power-supply negative terminal43, two transistors (fourth transistor 4 a and fifth transistor 5 a),and the capacitor 16. The fourth transistor 4 a is a P-channel MOSFET,and the fifth transistor 5 a is an N-channel MOSFET. The fourthtransistor 4 a and the fifth transistor 5 a are connected in seriesbetween the power-supply positive terminal 33 and the power-supplynegative terminal 43. More specifically, the source of the fourthtransistor 4 a is connected to the power-supply positive terminal 33,and the drain of the fourth transistor 4 a is connected to the drain ofthe fifth transistor 5 a. The source of the fifth transistor 5 a isconnected to the power-supply negative terminal 43. One electrode 16 aof the capacitor 16 is connected to the drain and gate of the firsttransistor 1 a of the current mirror circuit 15 a, and the gate of thesecond transistor 2 a. The other electrode 16 b of the capacitor 16 isconnected to a middle point between the fourth transistor 4 a and thefifth transistor 5 a that are connected in series.

The gates of the fourth and fifth transistors 4 a, 5 a are bothconnected to the input terminal 11 via the NOT device 13. Therefore, thegates of the fourth and fifth transistors 4 a, 5 a receive a signal(inversion signal Vin1 x) obtained by inverting the low level and highlevel of the drive signal Vin1. When the gates of the fourth and fifthtransistors 4 a, 5 a are held at a low potential, the P-channel fourthtransistor 4 a is ON, and the N-channel fifth transistor 5 a is OFF. Asa result, the electrode 16 b of the capacitor 16 is connected to thepower-supply positive terminal 33, and the capacitor 16 is charged. Whenthe gates of the fourth and fifth transistors 4 a, 5 a are held at ahigh potential, the fourth transistor 4 a is OFF, and the fifthtransistor 5 a is ON. As a result, the electrode 161 of the capacitor 16is connected to the power-supply negative terminal 43, and the capacitor16 is discharged. Namely, the capacitor 16 is charged when it issupplied with electric power from the power-supply positive terminal 33,and is discharged through the power-supply negative terminal 43. Thefourth and fifth transistors 4 a, 5 a function as a switch for switchingthe destination to which the electrode 16 b of the capacitor 16 isconnected from the power-supply negative terminal 43 to the power-supplypositive terminal 33, in response to the drive signal Vin1. Theelectrode 16 a of the capacitor 16 is connected to the gates of thefirst and second transistors 1 a, 2 a. Therefore, the gates of the firstand second transistors 1 a, 2 a are charged when the capacitor 16 ischarged, and the gates of the first and second transistors 1 a, 2 a aredischarged when the capacitor 16 is discharged.

The operation of the drive unit 10 a will be generally described.Suppose the case where the drive unit 10 a receives a pulse edge atwhich the drive signal Vin1 switches from the low level (Low) to thehigh level (High). Before the drive signal Vin1 switches to the highlevel, the input terminal 11 is held at a low potential. At this time,the sixth transistor 6 a is held in the ON state. Also, the currentcontrol circuit 21 holds the current source 17 in the output stoppedstate. The gates of the fourth and fifth transistors 4 a, 5 a of thegate charge circuit 14 a receive a high-level signal via the NOT device13. Therefore, the electrode 16 b of the capacitor 16 is connected tothe power-supply negative terminal 43, and the capacitor 16 is held in adischarged state, as described above. The gate of the N-channel thirdtransistor 3 a also receives the high-level signal via the NOT device13. Therefore, the third transistor 3 a is placed in the ON state, andthe gates of the first and second transistors 1 a, 2 a of the currentmirror circuit 15 a are connected to the power-supply negative terminal49. As a result, the first and second transistors 1 a, 2 a are held inthe OFF states. Since the second transistor 2 a is held in the OFFstate, and the sixth transistor 6 a is held in the ON state, the outputterminal 12 is held at the voltage VCC1 of the power-supply positiveterminal 31. Namely, the power transistor 99 is held in the ON state.

The operation of the drive unit 10 a when the drive signal Vin1 switchesfrom the low level (Low) to the high level (High) will be generallydescribed. When the drive signal Vin1 switches from the low level to thehigh level, the sixth transistor 6 a is turned off, and the secondtransistor 2 a is turned on. As a result, the potential of the outputterminal 12 is lowered to the potential of the power-supply negativeterminal 41, and the power transistor 99 switches from ON to OFF.

The operation of the drive unit 10 a when the drive signal Vin1 switchesfrom the low level to the high level will be specifically described.When the drive signal Vin1 switches from the low level to the highlevel, the third transistor 3 a is turned OFF, and current flow betweenthe gates of the first and second transistors 1 a, 2 a of the currentmirror circuit 15 a and the power-supply negative terminal 49 is cutoff. At the same time, the current control circuit 21 turns the currentsource 17 into the output state, in response to the drive signal Vin1.As a result, the current source 17 starts delivering current, and thecurrent starts being supplied to the first transistor 1 a. Since thefirst transistor 1 a is in the OFF state at first, the drain and thesource are disconnected from each other. Therefore, the current suppliedfrom the current source 17 is supplied to the gates of the first andsecond transistors 1 a, 2 a. Namely, the current control circuit 21starts charging the gate(s) of the first transistor 1 a (and the secondtransistor 2 a) using the current source 17, in response to the drivesignal Vin1.

Also, in response to the drive signal Vin1, the destination to which thecapacitor 16 of the gate charge circuit 14 a is connected is switchedfrom the power-supply negative terminal 43 to the power-supply positiveterminal 33, and the capacitor 16 is charged. Since electric power issupplied to the capacitor 16 that has been in the discharged state,electric power is supplied front the gate charge circuit 14 a to thegates of the first and second transistors 1 a, 2 a through the capacitor16. The gates of the first and second transistors 1 a, 2 a are suppliedwith electric power from both of the current source 17 and the gatecharge circuit 14 a, and are rapidly charged. The gate voltage of thefirst and second transistors 1 a, 2 a rapidly increases, and the firstand second transistors 1 a, 2 a switch from OFF to ON. Since the secondtransistor 2 a is turned on, and the sixth transistor 6 a is turned offas described above, the potential of the output terminal 12 is loweredto the potential of the power-supply negative terminal 41, the powertransistor 99 is switched front ON to OFF. Namely, the drive unit 10 aswitches the power transistor 99 from ON to OFF, in response to thepulsed drive signal Vin1 from the high-order control unit.

On the other hand, when the drive signal Vin1 switches from the highlevel (High) to the low level (Low), the voltage of the output terminal12 of the drive unit 10 a is raised to the voltage VCC1 of thepower-supply positive terminal 31, and the power transistor 99 isswitched from OFF to ON. The operation of the drive unit 10 a when thepotential of the output terminal 12 switches from the low potential tothe high potential will not described herein.

The gate charge circuit 14 a automatically stops supply of electricpower by the time when the output current of the current source 17reaches the current upper-limit value Idmax. This is achieved when theoutput terminal voltage Vref of the current source 17 at the time whencurrent of the current upper-limit value Idmax flows between the drainand source of the first transistor 1 a due to the output current(reference current) of the current source 17, the capacitance Ccg of thecapacitor 16, the total capacitance Ccm of the gate capacitances of thefirst and second transistors 1 a, 2 a, and the voltage Vcg of thepower-supply positive terminal 33 for charging the capacitor 16, satisfythe relationship of the following expression (1).Vref≥Vcg·Ccg/(Ccg+Ccm)  (1)

The right side [Vcg·Ccg/(Ccg+Ccm)] of the above expression (1) meansvoltage that is realized at the electrode 16 a closer to the currentmirror circuit 15 a, of the capacitor 16, due to the voltage Vcg of thepower-supply positive terminal 33. In other words, [Vcg·Ccg/(Ccg+Ccm)]corresponds to the gate voltage of the first and second transistors 1 a,2 a achieved by the voltage Vcg of the power-supply positive terminal33. In the following description, symbol Vcm represents the gate voltageof the first and second transistors 1 a, 2 a, and symbol Vth representsthe gate threshold voltage of the first and second transistors 1 a, 2 a.

As described above, the current source 17 and the gate charge circuit 14a start supply of electric power, in response to the drive signal Vin1.As the supply of electric power is started, the gate voltage Vcm of thefirst and second transistors 1 a, 2 a is increased. The power issupplied from both of the current source 17 and the gate charge circuit14 a, to the gates of the first and second transistors 1 a, 2 a, untilthe gate voltage Vcm increases up to [Vcg·Ccg/(Ccg+Ccm)]. Once the gatevoltage Vcm reaches [Vcg·Ccg/(Ccg+Ccm)], the gate charge circuit 14 acannot deliver current any longer, and supply of electric power from thegate charge circuit 14 a is stopped. Since the voltage Vref of theoutput terminal when the current source 17 supplies current to the drainof the first transistor 1 a (namely, the output terminal voltage at thetime when the upper-limit current Idmax is delivered) is equal to orhigher than [Vcg·Ccg/(Ccg+Ccm)], electric power continues to be suppliedthrough the current source 17. The voltage Vref corresponds to themaximum voltage of the output terminal of the current source 17.

The maximum voltage Vref of the output terminal of the current source 17is set to a higher level than the gate threshold voltage Vth. If thegate voltage Vcm of the first and second transistors 1 a, 2 a exceedsthe gate threshold volt Vth, the first and second transistors 1 a, 2 aswitch from OFF to ON at the same time. If the first transistor 1 a isturned on, current (drain current) flows between the drain and source ofthe first transistor 1 a. Finally, the gate voltage Vcm becomes equal toVref, and the drain current of the first transistor 1 a becomes equal tothe current upper-limit value Idmax of the current source 17.

Since the main current of the first transistor 1 a does not exceed themagnitude of Idmax, as stated above, the size (channel width) of thefirst transistor 1 a is only required to permit the current upper-limitvalue Idmax.

Where symbol M1 represents the size (channel width) of the firsttransistor 1 a, and symbol M2 represents the size (channel width) of thesecond transistor 2 a, a relationship that Id2=(M2/M1)×Id1 isestablished between the drain current Id1 that flows through the firsttransistor 1 a, and the drain current Id2 that flows through the secondtransistor 2 a. Namely, if the size M1 of the first transistor 1 a ismade smaller than the size M2 of the second transistor 2 a, the secondtransistor 2 a can be switched with small power consumption. This meansthat the drive unit 10 a can switch the power transistor 99 whilesuppressing or reducing electric power consumption.

In order to reduce the size M1 of the first transistor 1 a, the currentupper-limit value Idmax of the current source 17 needs to be reduced.The reduction of the current upper-limit value Idmax of the currentsource 17 means reduction of electric current with which the gates ofthe first and second transistors 1 a, 2 a are charged, and the chargingspeed is reduced. If the gates of the first and second transistors 1 a,2 a are charged slowly it takes some time from the time when the drivesignal Vin1 is received to the time when the first and secondtransistors 1 a, 2 a switch from OFF to ON. Namely, the response isdelayed, in other words, the length of time from the time when the drivesignal Vin1 is received to the time when the power transistor 99 isdriven is increased. Thus, the drive unit 10 a includes the gate chargecircuit 14 a for temporarily supplying electric power to the gates ofthe first and second transistors 1 a, 2 a, in addition to the currentsource 17. With the gate charge circuit 14 a thus provided, the speed ofcharging the gates of the first and second transistors 1 a, 2 a isincreased, and the current (main current) that constantly flows betweenthe drain and source of the first transistor 1 a is limited to thecurrent upper-limit value Idmax or smaller. Namely, the drive unit 10 amakes it possible to reduce the length of time it takes from the timewhen the drive signal Vin1 is received to the time when the powertransistor 99 is driven, while suppressing or reducing electric powerconsumption.

Referring to the time chart of FIG. 2, the operation of the drive unit10 a will be described again. Vin1 is a drive signal transmitted from ahigh-order control unit. Vin1 x is an inversion signal of the drivesignal and is supplied to the gate of each of the third transistor 3 a,fourth transistor 4 a, and the fifth transistor 5 a. As described above,Vcm denotes the gate voltage of the first and second transistors 1 a, 2a. Id1 denotes the drain current of the first transistor 1 a, and Id2denotes the drain current of the second transistor 2 a. Vout denotes thevoltage of the output terminal 12.

At time t1, the drive signal Vin1 changes from a low level (Low) to ahigh level (High). At time t1, Vin1 x changes from a high level (High)to a low level (Low). As described above, if the drive signal Vin1changes from the low level to the high level, both the third transistor3 a and the sixth transistor 6 a switch from ON to OFF. Also, the firsttransistor 1 a and the second transistor 2 a switch from OFF to ON, aswill be described later. Time t1 is the time of receiving of a pulseedge of the drive signal Vin1, which is a command for switching of thepower transistor 99.

If the inversion signal Vin1 x switches from the high level to the lowlevel, the current control circuit 21 switches the current source 17from the output stopped state to the output state. As a result, electricpower starts being supplied from the current source 17. Namely, thecurrent source 17 starts charging the gates of the first and secondtransistors 1 a, 2 a. At the same time, the destination to which theelectrode 16 b of the capacitor 16 is connected changes from thepower-supply negative terminal 43 to the power-supply positive terminal33, and electric power starts being also supplied from the gate chargecircuit 14 a. With electric power thus supplied from both of the currentsource 17 and the gate charge circuit 14 a, the gate voltage Vcm israpidly increased.

The total capacitance Ccm of the gate capacitance of the firsttransistor 1 a and the gate capacitance of the second transistor 2 a,voltage Vcg of the power-supply positive terminal 33, and the gatethreshold voltage Vth of the first transistor 1 a and the secondtransistor 2 a, are determined so as to satisfy the relationship of thefollowing expression (3).Vcg·Ccg/(Ccg+Ccm)≥Vth  (3)

As described above, [Vcg·Ccg/(Ccg+Ccm)] is the gate voltage Vcm that isrealized by the voltage Vcg of the power-supply positive terminal 33. InFIG. 2, the voltage Vcm1 corresponds to [Vcg·Vcg/(Ccg+Ccm)]. The aboveexpression (3) means that the gate threshold voltage Vth is lower thanthe voltage Vcm1. Therefore, while electric power is kept supplied fromthe gate charge circuit 14 a, the first transistor 1 a and the secondtransistor 2 a switch from OFF to ON. At time t2, the gate voltage Vcmreaches the gate threshold voltage Vth, and the first transistor 1 a andthe second transistor 2 a switch from OFF to ON. Accordingly, from timet2, the drain currents Id1, Id2 start flowing, and the voltage Vout ofthe output terminal 12 starts being lowered. The drive unit 10 areceives the pulse edge of the drive signal Vin1 at time t1, and thefirst and second transistors 1 a, 2 a of the current mirror circuit 15 aswitch from OFF to ON at time t2.

At time t3, the gate voltage Vcm reaches the voltage Veil. At time t3,the gate charge circuit 14 a becomes unable to cause any more current toflow from the capacitor 16 to the first transistor 1 a. Namely, at timet3 at which the gate voltage Vcm reaches the voltage Vcm1, supply ofelectric power from the gate charge circuit 14 a is automaticallystopped. After time t3, only the output power of the current source 17is supplied to the first transistor 1 a. Since the supply of electricpower from the gate charge circuit 14 a is stopped, the rate of increaseof the drain current Id1 of the first transistor 1 a is reduced aftertime t3. At time t4, the drain current Id1 reaches the currentupper-limit value Idmax. After time t4, the drain current Id1 having thecurrent upper-limit value Idmax keeps flowing through the firsttransistor 1 a. After time t2, the drain current Id2, which is obtainedby multiplying the drain current Id1 of the first transistor 1 a by[M2/M1], flows through the second transistor 2 a. The drain current Id2of the second transistor 2 a is produced by gate discharge of the powertransistor 99. As the drain current Id2 flows through the secondtransistor 2 a, the gate voltage of the power transistor 99, namely, thevoltage (output terminal voltage Vout) of the output terminal 12, islowered. When the output terminal voltage Vout becomes insufficient forcausing current of Id2=Id1×(M2/M1) to flow, the output terminal voltageVout and the drain current Id2 of the second transistor 2 a are bothreduced, and become equal to zero at time t5. Between time t4 and timet5, the power transistor 99 switch from ON to OFF when the outputterminal voltage Vout becomes lower than the gate threshold voltage ofthe power transistor 99.

After time t4, the gate voltage Vcm2 is equal to the output terminalvoltage Vref of the current source 17 when it delivers the upper-limitcurrent Idmax (Vcm2=Vref). In a certain period after time t4, the gatevoltage of the power transistor 99, namely, the voltage (output terminalvoltage Vout) of the output terminal 12 becomes temporarily flat. Theperiod indicated by symbol S in FIG. 2 indicates the “period in whichthe output terminal voltage Vout becomes flat”. This is a phenomenoncaused by the mirror effect of the current mirror effect. The same orsimilar phenomenon is observed in subsequent time charts.

FIG. 3 shows a time chart of the case where the drive unit does notinclude the gate charge circuit 14 a. At time t1, the drive signal Vin1changes from a low level (Low) to a high level (High), and electriccurrent starts being supplied from the current source 17. In the case ofFIG. 3 in which the gate charge circuit 14 a is not provided, the rateof increase of the gate voltage Vcm is smaller than the rate of increasein the period of time t1-t3 of FIG. 2. Therefore, time t2 at which thegate voltage Vcm reaches the gate threshold voltage Vth is later thanthat in the case of FIG. 2. Namely, it takes time from the time when thedrive signal Vin1 is received to the time when the first and secondtransistors 1 a, 2 a of the current mirror circuit 15 a switch from OFFto ON. As a result, time t5 at which the output terminal voltage Vout isreduced down to zero is later than that in the case of FIG. 2. Thelength of time it takes from the time when the drive unit 10 a of thefirst embodiment (the case of FIG. 2) receives the drive signal Vin1 tothe time when it drives the power transistor 99 is shorter than that ofthe drive unit (the case of FIG. 3) that does not have the gate chargecircuit 14 a. In both of the case of FIG. 2 and the case of FIG. 3, thedrain current Id1 that flows through the first transistor 1 a is equalto or smaller than Idmax.

As is apparent, from comparison between FIG. 2 and FIG. 3, the driveunit 10 a including the gate charge circuit 14 a can shorten the lengthof time from receiving of the drive signal Vin1 to driving of the powertransistor 99, without increasing the drain current Id1 of the firsttransistor 1 a of the current mirror circuit 15 a (namely, withoutincreasing the electric power consumption). The gate charge circuit 14 aincluding the capacitor that satisfies the expression (1) affords thisadvantage to the drive unit 10 a.

In the drive unit 10 a of the first embodiment, when the drive unit Vin1switches from the low level to the high level, the current source 17starts supplying electric power, and the gate charge circuit 14 a startssupplying electric power. When the amount of charge per unit time of thegate charge circuit 14 a is larger than the amount of charge per unittime of the current source 17, a given time difference may be providedbetween the start of power supply of the gate charge circuit 14 a andthe start of power supply of the current source 17. For example, thegate charge circuit 14 a starts supplying electric power immediatelyafter switching of the drive signal Vin1 from the low level to the highlevel, and the current source 17 starts supplying electric power afterwaiting for the given time difference after switching of the drivesignal Vin1. The time difference is, for example, tune it takes for thegate voltage Vcm to reach the maximum voltage Vcm1=[Vcg·Ccg/(Ccg+Ccm)]provided by the gate charge circuit 14 a.

Second Embodiment

Referring to FIG. 4, a second embodiment will be described. In the driveunit 10 a of the first embodiment, the sixth transistor 6 a is connectedbetween the power-supply positive terminal 31 and the output terminal12, and the second transistor 2 a of the current mirror circuit 15 a isconnected between the output terminal 12 and the power-supply negativeterminal 41. On the other hand, in a drive unit 10 b of the secondembodiment, the second transistor 2 a of the current mirror circuit 15 ais connected between the power-supply positive terminal 31 and theoutput terminal 12, and the resistor 18 and a sixth transistor 106 a areconnected between the output terminal 12 and the power-supply negativeterminal 41. A gate of the sixth transistor 106 a is connected to theNOT device 13, and the inversion signal Vin1 x is transmitted to thegate of the sixth transistor 106 a. The power-supply negative terminal42 is controlled so as to be at the same voltage as the output terminal12.

In the drive unit 10 b, when the drive signal Vin1 switches from the lowlevel (Low) to the high level (High), the sixth transistor 106 aswitches from ON to OFF, and the second transistor 2 a switches from OFFto ON. As a result, the potential of the output terminal 12 is raisedfrom the potential of the power-supply negative terminal 41 to thevoltage VCC1 of the power-supply positive terminal 31, and the powertransistor 99 switches from OFF to ON.

The current mirror circuit 15 a, gate charge circuit 14 a, and thecurrent source 17 of the drive unit 10 b of FIG. 4 are identical withthose of the drive unit 10 a of the first embodiment, and therefore,will not be described in detail. The drive unit 10 a of the firstembodiment of FIG. 1 is different from the drive unit 10 b of the secondembodiment in that the second transistor 2 a of the current mirrorcircuit 15 a is connected between the output terminal 12 and thepower-supply negative terminal 41 in the drive unit 10 a, whereas thesecond transistor 2 a is connected between the power-supply positiveterminal 31 and the output terminal 12 in the drive unit 10 b. However,the function and effect of the gate charge circuit 14 a in the driveunit 10 b are identical with those of the drive unit 10 a of FIG. 1.Like the drive unit 10 a of FIG. 1, the drive unit 10 b of FIG. 4 canshorten the length of time from receiving of the drive signal Vin1 todriving of the power transistor 99, while suppressing or reducingelectric power consumption.

A point to note in connection with the first and second embodiments willbe stated. In the drive unit 10 a of the first embodiment, eachparameter is set so that the relationship of the above expression (3) issatisfied. When the relationship of the expression (3) is not satisfied,the gate voltage Vcm exceeds the gate threshold voltage Vth at a pointin time between time t3 and time t4 in FIG. 2, and the first transistor1 a and the second transistor 2.a switch from OFF to ON. In this case,too, the first and second transistors 1 a, 2 a can be switched in ashorter time, as compared with the case of FIG. 3 where no gate chargecircuit is provided. The same point to note is applied to the secondembodiment.

Third Embodiment

Referring to FIG. 5, a drive unit 10 c of a third embodiment will bedescribed. In the drive unit 10 c of the third embodiment, a gate chargecircuit 14 b is different from the gate charge circuit 14 a of the driveunit 10 a of the first embodiment. In the block diagram of FIG. 5, thedevices other than the gate charge circuit 14 b are identical with thecorresponding devices shown in the block diagram of FIG. 1, andtherefore, will not be described.

Like the gate charge circuit 14 a of the first embodiment, the gatecharge circuit 14 b is connected to the drain and gate of the firsttransistor 1 a, and the gate of the second transistor 2 a. The gatecharge circuit 14 b consists of the power-supply positive terminal 33 towhich the voltage Vcg is supplied, a voltage-driven type P-channelfourth transistor 104 a, and a diode 19. A cathode 19 a of the diode 19is connected to the drain and gate of the first transistor 1 a, and thegate of the second transistor 2 a. An anode 19 b of the diode 19 isconnected to the power-supply positive terminal 33 via the fourthtransistor 104 a. A gate of the fourth transistor 104 a is connected tothe input terminal 11 via the NOT device 13. Namely, the fourthtransistor 104 a functions as a switch for switching the connectingstate between the power-supply positive terminal 33 and the first andsecond transistors 1 a, 2 a from a cutoff state to a conducting state,in response to the drive signal Vin1.

The output terminal voltage Vref of the current source 17 when currentof the current upper-limit value Idmax flows between the drain andsource of the first transistor 1 a due to the output current (referencecurrent) of the current source 17, forward voltage Vf of the diode 19,and the voltage Vcg of the power-supply positive terminal 33 aredetermined so as to satisfy the relationship of the following expression(2).Vref≥Vcg−Vf  (2)

Further, the forward voltage Vf, voltage Vcg of the power-supplypositive terminal 33, and the gate threshold voltage Vth of the firstand second transistors 1 a, 2 a are determined so as to satisfy thefollowing expression (4).Vcg−Vf≥Vth  (4)

Like the drive unit 10 a of the first embodiment, the drive unit 10 cswitches the power transistor 99 from ON to OFF when the pulsed drivesignal Vin1 received by the input terminal 11 switches from a low level(Low) to a high level (High). The operation of the drive unit 10 c,mainly, that of the gate charge circuit 14 b, will be described.

When the drive signal Vin1 that switches from the low level (Low) to thehigh level (High) is received, the current control circuit 21 switchesthe current source 17 connected between the power-supply positiveterminal 32 and the first transistor 1 a from the output stopped stateto the output state. As a result, electric power starts being suppliedfrom the current source 17 to the first transistor 1 a. At the sametime, the gate of the fourth transistor 104 a switches from a highpotential (High) to a low potential (Low), in response to the inversionsignal Vin1 x of the drive signal Vin1, and the connecting state betweenthe power-supply positive terminal 33 and the first and secondtransistors 1 a, 2 a switches from the cutoff state to the conductingstate. The gate charge circuit 14 b charges the gates of the first andsecond transistors 1 a, 2 a, separately from the current source 17.Until the gate voltage Vcm of the first and second transistors 1 a, 2 areaches [Vcg−Vf], electric power is supplied from both the currentsource 17 and the gate charge circuit 14 b to the gates of the first andsecond transistors 1 a, 2 a. As a result, the gate voltage Vcm israpidly increased. When the gate voltage Vcm reaches [Vcg−Vf], supply ofelectric power from the gate charge circuit 14 b is automaticallystopped. According to the above expression (4), the first and secondtransistors 1 a, 2 a switch from OFF to ON, by the time when the gatevoltage Vcm reaches [Vcg−Vf]. As a result, the drain current startsflowing through the first and second transistors 1 a, 2 a.

According to the relationship of the above expression (2), electricpower continues to be supplied from the current source 17, even afterthe gate voltage Vcm reaches [Vcg−Vf]. When the gate voltage Vcm exceeds[Vcg−Vf], the diode 19 prevents current from flowing from the currentsource 17 into the gate charge circuit 14 b. With electric power thussupplied from the current source 17, the gate voltage Vcm increases tobe higher than [Vcg−Vf].

After the gate voltage Vcm exceeds [Vcg-Vf], the gate voltage Vcmincreases up to the voltage Vref, with electric power supplied front thecurrent source 17, and the drain current Id1 flowing through the firsttransistor 1 a increases up to the current upper limit value Idmax.Thereafter, the gate voltage Vcm is kept at the voltage Vref, and thedrain current of the current upper-limit value Idmax keeps flowingthrough the first transistor 1 a.

When the second transistor 2 a, as well as the first transistor 1 a,switches from OFF to ON, the drain current Id2 flows through the secondtransistor 2 a, and the voltage Vout of the output terminal 12 islowered. When the voltage Vout of the output terminal 12 becomes lowerthan the gate voltage of the power transistor 99, the power transistor99 switches from ON to OFF.

The operation of the drive unit 10 c is the same as that of the driveunit 10 a as shown in the time chart of FIG. 2. However, Vcm1 of FIG. 2corresponds to [Vcg−Vf]. Like the drive unit 10 a of the firstembodiment, the drive unit 10 c of the third embodiment can shorten thelength of time from receiving of the drive signal Vin1 to driving of thepower transistor 99, without increasing electric power consumption ofthe first transistor 1 a. The provision of the diode 19, and the gatecharge circuit 14 b that satisfies the expression (2), afford thisadvantage to the drive unit 10 c.

The gate charge circuit 14 a of the drive unit 10 b of the secondembodiment as described above referring to FIG. 4 may be replaced withthe gate charge circuit 14 b using the diode 19.

In the drive unit 10 c of the third embodiment, each parameter is set soas to satisfy the relationship of the above expression (4). However,when the relationship of the expression (4) is not satisfied, the gatevoltage Vcm exceeds the gate threshold voltage Vth between time t3 andtime t4 of FIG. 2, and the first transistor 1 a and the secondtransistor 2 a switch from OFF to ON. In this case, too, the firsttransistor 1 a and the second transistor 2 a can be switched in ashorter time, as compared with the case of FIG. 3 where no gate chargecircuit is provided.

Fourth Embodiment

Referring next to FIG. 6 and FIG. 7, a drive unit of a fourth embodimentwill be described. FIG. 6 is a block diagram of the drive unit 10 d ofthe fourth embodiment, and FIG. 7 is a time chart of the drive unit 10d. The drive unit 10 d uses voltage-driven type P-channel transistors inits current mirror circuit. In the fourth embodiment to the sixthembodiment, a drive unit using voltage-driven type P-channel transistorsin its current mirror circuit will be described.

The drive unit 10 d switches the power transistor 99 between ON and OFF,using a pulse edge of the pulsed drive signal Vin1 as a trigger. Thedrive unit 10 d holds the power transistor 99 in the OFF state when thedrive signal Vin1 is at a high level (High in FIG. 7), and switches thepower transistor 99 from OFF to ON when it receives the drive signalVin1 that switches from the high level to a low level (Low in FIG. 7).

The drive unit 10 d switches the first and second transistors 1 b, 2 bfrom OFF to ON, using a pulse edge at which the drive signal Vin1switches from the high level to the low level, as a trigger, so that thepower transistor 99 is switched from OFF to ON, as will be described indetail later. While a phrase “in response to the drive signal Vin1”often appears in the following description, this phase specificallymeans “in response to the drive signal Vin1, which is a drive, signalthat switches the power transistor 99 (transistor to be driven) betweenON and OFF, and switches the first and second transistors 1 a, 2 a fromOFF to ON”.

The drive unit 10 d includes the input terminal 11 and the outputterminal 12. A high-order control unit is connected to the inputterminal 11, and the input terminal 11 receives the drive signal Vin1.The gate of the power transistor 99 to be driven is connected to theoutput terminal 12.

The drive unit 10 d includes six transistors, i.e., a first transistor 1b through a sixth transistor 6 b. The first transistor 1 b, secondtransistor 2 b, third transistor 3 b, and the fourth transistor 4 b areP-channel MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors),and the fifth transistor 5 b and the sixth transistor 6 b are N-channelMOSFETs.

Some power-supply positive terminals 31, 32, 33, 39 and somepower-supply negative terminals 41, 42, 43 are provided inside the driveunit 10 d. The power-supply positive terminals 31, 32, 33, 39 areterminals that supply electric power to respective devices, and thepower-supply negative terminals 41, 42, 43 correspond to dischargeterminals of current that flows out of respective devices. The voltagesof the power-supply positive terminals and power-supply negativeterminals are determined by a power supply circuit (not shown). Thepower-supply negative terminals 41, 42, 43 may correspond to the groundterminal of the drive unit 10 d, or may be held at voltages eachobtained by adding a given bias to the voltage of the ground terminal ofthe drive unit 10 d. The power-supply positive terminal 31 is held atthe ON voltage VCC1 of the power transistor 99. The power-supplynegative terminal 41 is held at the OFF voltage of the power transistor99.

The drive unit 10 d includes the NOT device 13 (inverter), currentcontrol circuit 22, capacitor 26, current source 27, and the resistor18, in addition to the above-mentioned six transistors 1 b-6 b. Thefirst transistor 1 b and the second transistor 2 b constitute a currentmirror circuit 15 b, and the fourth transistor 4 b, fifth transistor 5b, and the capacitor 26 constitute a gate discharge circuit 24 a.

The output terminal 12 of the drive unit 10 d is connected to thepower-supply negative terminal 41, via the resistor 18 and the sixthtransistor 6 b. The second transistor 2 b is connected between theoutput terminal 12 and the power-supply positive terminal 31. The drainof the second transistor 2 b is connected to the output terminal 12, andthe source is connected to the power-supply positive terminal 31. Whenthe sixth transistor 6 b is turned off, and the second transistor 2 b isturned on, the gate voltage of the power transistor 99 is raised to thevoltage VCC1 of the power-supply positive terminal 31, and the powertransistor 99 is turned on. When the sixth transistor 6 b is turned on,and the second transistor 2 b is turned off, the gate voltage of thepower transistor 99 is lowered to the voltage of the power-supplynegative terminal 41, and the power transistor 99 is turned off. Thegate of the sixth transistor 6 b is connected to the input terminal 11,and the sixth transistor 6 b is switched between ON and OFF, accordingto the drive signal Vin1 received by the input terminal 11. The sixthtransistor 6 b function as a switch circuit for selectively allowing andinhibiting flow of current between the power-supply negative terminal 41and the output terminal 12. (the gate of the power transistor 99). Thesixth transistor 6 b selectively allows and inhibits flow of currentbetween the power-supply negative terminal 41 and the output terminal12, in response to the drive signal Vin1 received by the input terminal11. The sixth transistor 6 b is quickly switched between ON and OFF,according to the drive signal Vin1. The length of time it takes fromreceiving of the drive signal Vin1 to driving of the power transistor 99depends on operation of the current mirror circuit 15 b.

The second transistor 2 b and the first transistor 1 b constitute thecurrent mirror circuit 15 b. The second transistor 2 b is switchedbetween ON and OFF, according to ON/OFF of the first transistor 1 b. Asdescribed above, both of the first transistor 1 b and the secondtransistor 2 b are voltage-driven type P-channel transistors.Accordingly, current flow between the drain and the source is cut off(cutoff state) when the gate voltage is higher than a predetermined gatethreshold voltage, and current is allowed to flow between the drain andthe source (conducting state) when the gate voltage is lower than thegate threshold voltage. The source corresponds to a high-potential-sideelectrode, and the drain corresponds to a low-potential-side electrode.The drain of the first transistor 1 b is connected to the gate. Thesource of the first transistor 1 b is connected to the power-supplypositive terminal 32. The gate of the first transistor 1 b is connectedto the gate of the second transistor 2 b. As the first transistor 1 band the second transistor 2 b, transistors having the same gatethreshold voltage Vth are employed.

The drain of the third transistor 3 b is connected to the gates of thefirst and second transistors 1 b, 2 b. The source of the thirdtransistor 3 b is connected to the power-supply positive terminal 39.The third transistor 3 b is provided for charging the gates of the firstand second transistors 1 b, 2 b. The gate of the third transistor 3 b isconnected to the input terminal 11 via the NOT device 13. Therefore, thegate of the third transistor 3 b receives the inversion signal Vin1 x ofthe drive signal Vin1. The third transistor 3 b charges the gates of thefirst and second transistors 1 b, 2 b, in response to the drive signalVin1 received by the input terminal 11.

The current source 27 is connected to the drain (low-potential-sideelectrode) of the first transistor 1 b, and the power-supply negativeterminal 42 is connected to the current source 27. The current source 27is controlled by the current control circuit 22. The current controlcircuit 22 receives the drive signal Vin1. The current control circuit22 switches the current source 27 from a current cutoff state to aconducting state, in response to the drive signal Vin1. As a result,gate discharge of the first and second transistors 1 b, 2 b is started.Namely, the current control circuit 22 starts gate discharge of thefirst and second transistors 1 b, 2 b using the current source 27(through the current source 27), in response to the drive signal Vin1.The current source 27, when it is in the conducting state, limits thecurrent discharged from the gates of the first transistor 1 b and thesecond transistor 2 b through the power-supply negative terminal 42, toa predetermined constant current (current upper-limit value Idmax).Immediately after the current source 27 switches from the cutoff stateto the conducting state, the current that passes through the currentsource 27 and the voltage of its input terminal are gradually increased.The input terminal voltage of the current source 27 becomes equal toVLref when the first and second transistors 1 b, 2 b are ON, and currentof the current upper-limit value Imax flows between the drain and sourceof the first transistor 1 b.

The gate discharge circuit 24 a is connected to the drain of the firsttransistor 1 b, and the gates of the first and second transistors 1 b, 2b. The gate discharge circuit 24 a is a circuit that discharges thegates of the first and second transistors 1 b, 2 b, separately from thecurrent source 27. The gate discharge circuit 24 a consists of thepower-supply positive terminal 33 to which a voltage VCC3 is supplied,power-supply negative terminal 43 that is held at a voltage VLcg, twotransistors (the fourth transistor 4 b and the fifth transistor 5 b),and a capacitor 26. The voltage VLcg will be described later. The fourthand fifth transistors 4 b, 5 b are identical with the fourth and fifthtransistors 4 a, 5 a of FIG. 1.

The gates of the fourth and fifth transistors 4 b, 5 b are bothconnected to the input terminal 11 via the NOT device 13. The gates ofthe fourth and fifth transistors 4 b, 5 b receive the inversion signalVin1 x of the drive signal Vin1. When the drive signal Vin1 is at a highlevel (High) (when the inversion signal Vin1 x is at a low level (Low)),an electrode 26 b of the capacitor 26 is connected to the power-supplypositive terminal 33, and the capacitor 26 is charged. When the drivesignal Vin1 is at a low level (Lou) (when the inversion signal Vin1 x isat a high level (High)), the electrode 26 b of the capacitor 26 isconnected to the power-supply negative terminal 43, and the capacitor 26is discharged. The fourth and fifth transistors 4 b, 5 b function as aswitch for switching the destination to which the electrode 26 b of thecapacitor 26 is connected, from the power-supply positive terminal 33 tothe power-supply negative terminal 43, in response to the drive signalVin1. An electrode 26 a of the capacitor 26 is connected to the gates ofthe first and second transistors 1 b, 2 b. Therefore, when the capacitor26 is discharged, the gates of the first and second transistors 1 b, 2 bare also discharged.

The operation of the drive unit 10 d will be generally described.Suppose the case where a pulse edge at which the drive signal Vin1switches from the high level (High) to the low level (Low) is received.Before the drive signal Vin1 switches to the low level, the inputterminal 11 is held at a high potential. At this time, the sixthtransistor 6 b is held in the ON state. Also, the current controlcircuit 22 holds the current source 27 in the current cutoff state.Namely the current control circuit 22 stops the current source 27, andkeeps the connecting state between the first transistor 1 b and thepower-supply negative terminal 42 in the current cutoff state. The gatesof the fourth and fifth transistors 4 b, 5 b of the gate dischargecircuit 24 a receive a low-level signal via the NOT device 13.Therefore, the electrode 26 b of the capacitor 26 is connected to thepower-supply positive terminal 33, and the capacitor 26 is held in thecharged state. The gate of the P-channel third transistor 3 b alsoreceives the low-level signal via the NOT device 13. Therefore, thethird transistor 3 b is placed in the ON state, and the gates of thefirst and second transistors 1 b, 2 b are connected to the power-supplypositive terminal 39. As a result, the gate voltage is raised, and thefirst and second transistors 1 b, 2 b are held in the OFF states. Sincethe second transistor 2 b is held in the OFF state, and the sixthtransistor 6 b is held in the ON state, the output terminal 12 is heldat the voltage of the power-supply negative terminal 41. Namely, thepower transistor 99 is held in the OFF state.

The voltage of the power-supply positive terminal 33 of the gatedischarge circuit 24 a is the same as the voltage VCC3 of thepower-supply positive terminal 39 that raises the gate voltage of thefirst and second transistors 1 b, 2 b. When the third transistor 3 b andthe fourth transistor 4 b are both in the ON states, the gate voltage ofthe first and second transistors 1 b, 2 b is held at the ON voltage(voltage VCC3), owing to the power-supply positive terminals 39, 33.

The operation of the drive unit 10 d when the drive signal Vin1 thatswitches from the high level to the low level is received will bedescribed. Generally, when the drive signal Vin1 switches to the lowlevel, the sixth transistor 6 b is turned off, and the second transistor2 b is turned on. As a result, the potential of the output terminal 12is raised to the voltage VCC1 of the power-supply positive terminal 31,and the power transistor 99 is switched from OFF to ON.

The operation of the drive unit 10 d when the drive signal Vin1 thatswitches from the high level (High) to the low level (Low) is receivedwill be specifically described. When the drive signal Vin1 switches fromthe high level to the low level, the third transistor 3 b is turned off,and current flow between the gates of the first and second transistors 1b, 2 b of the current mirror circuit 15 b and the power-supply positiveterminal 39 is cut off. At the same time, the current control circuit 22turns the current source 27 into the conducting state in response to thedrive signal Vin1, so that electric power starts being discharged fromthe first transistor 1 b to the power-supply negative terminal 42. Sincethe first transistor 1 b is OFF at first, the drain and the source aredisconnected from each other. Therefore, electric power is dischargedfrom the gates of the first and second transistors 1 b, 2 b through thecurrent source 27. Namely, the current control circuit 22 starts gatedischarge of the first and second transistors 1 b, 2 b using the currentsource 27 (through the current source 27), in response to the drivesignal Vin1.

At the same time as switching by the current control circuit 22, thedestination to which the capacitor 26 of the gate discharge circuit 24 ais connected is switched from the power-supply positive terminal 33 tothe power-supply negative terminal 43, in response to the drive signalVin1, and the gates of the first and second transistors 1 b, 2 b arealso discharged through the capacitor 26. The gate discharge circuit 24a discharges the gates of the first and second transistors 1 b, 2 b,without involving the current source 27. The gates of the first andsecond transistors 1 b, 2 b are rapidly discharged through both of thecurrent source 27 and the gate discharge circuit 24 a. Therefore, thegate voltage of the first and second transistors 1 b, 2 b is rapidlyreduced, and the first and second transistors 1 b, 2 b switch from OFFto ON. Since the second transistor 2 b is turned on, and the sixthtransistor 6 b is turned off, the potential of the output terminal 12 israised to the voltage VCC1 of the power-supply positive terminal 31, andthe power transistor 99 is switched from OFF to ON. Namely, the driveunit 10 b switches the power transistor 99, in response to the pulseddrive signal Vin1 from a high-order control unit.

On the other hand, when the drive signal Vin1 switches from the lowlevel to the high level, the voltage of the output terminal 12 of thedrive unit 10 b is lowered to the potential of the power-supply negativeterminal 41, and the power transistor 99 is switched from ON to OFF. Theoperation of the drive unit 10 d when the potential of the outputterminal 12 switches from the high potential to the low potential willnot be described.

The gate discharge circuit 24 a automatically stops discharge before thedrain current of the first transistor 1 a reaches the currentupper-limit value Idmax. This is achieved when the first transistor 1 ais ON, and the input terminal voltage VLref of the current source 27when current of the current upper-limit value Idmax flows between thedrain and source of the first transistor 1 b, the capacitance Ccg of thecapacitor 26, the total capacitance Ccm of the gate capacitances of thefirst and second transistors 1 b, 2 b, and a voltage difference dVcgbetween the power-supply positive terminal 39 that supplies electricpower to the gates of the first and second transistors 1 b, 2 b, and thepower-supply negative terminal 43, satisfy the relationship of thefollowing expression (5).dVcg·Ccm/(Ccg+Ccm)≥Vref  (5)

The power-supply positive terminal 39 is a high voltage terminal forsupplying electric power to the gates of the first and secondtransistors 1 b, 2 b. Where VCC3 denotes the voltage of the power-supplypositive terminal 39, and VLcg denotes the voltage of the power-supplynegative terminal 43, dVcg is expressed as follows: dVcg=VCC3−VLcg.

In the above expression (5), “dVcg·Ccm/(Ccg+Ccm)” means a voltage thatis developed at the electrode 26 a of the capacitor 26 closer to thecurrent mirror circuit 15 b, due to the voltage difference dVcg betweenthe power-supply positive terminal 39 and the power-supply negativeterminal 43. In other words, “dVcg·Ccm/(Ccg+Ccm)” corresponds to thegate voltage Vcm of the first and second transistors 1 b, 2 b, which isachieved by the voltage difference dVcg.

As described above, the current source 27 and the gate discharge circuit24 a start releasing electric power from the gates of the first andsecond transistors 1 b, 2 b (namely, start discharging the gates), inresponse to the drive signal Vin1. As the discharge starts, the gatevoltage Vcm of the first and second transistors 1 b, 2 b is lowered. Thegates of the first and second transistors 1 b, 2 b are dischargedthrough both the current source 27 and the gate discharge circuit 24 a,until the gate voltage Vcm is lowered to “dVcg·Ccm/(Ccg+Ccm)”. When thegate voltage Vcm becomes lower than “dVcg·Ccm/(Ccg+Ccm)”, current cannotbe discharged from the gate discharge circuit 24 a, and dischargethrough the gate discharge circuit 24 a is stopped. Since the lowestvoltage VLref of the input terminal of the current source 27 is lowerthan “dVcg·Ccm/(Ccg+Ccm)”, discharge through the current source 27continues. Finally, the gate voltage Vcm becomes equal to VLref. Thelowest voltage VLref of the input terminal of the current source 27 willbe described later.

The lowest voltage VLref of the input terminal of the current source 27is set to a lower level than the gate threshold voltage Vth. When thegate voltage Vcm of the first and second transistors 1 b, 2 b becomeslower than the gate threshold voltage Vth, the first and secondtransistors 1 b, 2 b switch from OFF to ON at the same time. When thefirst transistor 1 b is turned on, current (drain current) flows betweenthe drain and source of the first transistor 1 b. As described above,the current discharged from the first transistor 1 b does not exceed themagnitude of “Idmax”; therefore, the first transistor 1 b is onlyrequired to have a size (channel width) large enough to permit thecurrent upper-limit value Idmax. The lowest voltage VLref of the inputterminal of the current source 27 corresponds to the input terminalvoltage of the current source 27 when the first and second transistors 1b, 2 b are ON, and the current of the current upper-limit value Idmaxflows between the drain and source of the first transistor 1 b.

The drive unit 10 d includes the gate discharge circuit 24 a fordischarging the gates of the first and second transistors 1 b, 2 b,aside from the power-supply negative terminal 42 and the current source27. Immediately after the drive unit 10 d receives the drive signal Vin1as a command for switching of the power transistor 99, the gates of thefirst and second transistors 1 b, 2 b are discharged by both the currentsource 27 and the gate discharge circuit 24 a. Therefore, the length oftime it takes from the time when the drive signal Vin1 is received tothe time when the first and second transistors 1 b, 2 b switch from OFFto ON is shortened. Also, the gate discharge circuit 24 a is stopped bythe time when the current (drain current) that flows between the drainand source of the first transistor 1 b reaches the current upper-limitvalue Idmax. The gate discharge circuit 24 a that satisfies the aboveexpression (5) makes it possible to shorten the time from receiving ofthe drive signal Vin1 to driving of the power transistor 99, whilelimiting the current (drain current) that constantly flows between thedrain and source of the first transistor 1 b to the current upper-limitvalue Idmax or smaller.

Referring to the time chart of FIG. 7, the operation of the drive unit10 d will be described again. Symbols Vin1, Vin1 x, Vcm, Id1, Id2, andVout have the same meanings as those in the case of FIG. 2.

The drive signal Vin1 changes from a high level (High) to a low level(Low) at time t1. The inversion signal Vin1 x changes from the low level(Low) to the high level (High) at time t1. As described above, when thedrive signal Vin1 changes from the high level to the low level, thethird transistor 3 b and the sixth transistor 6 b are both switched fromON to OFF.

If the inversion signal Vin1 x switches from the low level to the highlevel, the current control circuit 22 switches the current source 27from the current cutoff state to the conducting state, and dischargethrough the current source 27 is started. At the same time, thedestination to which the electrode 26 b of the capacitor 26 is connectedswitches from the power-supply positive terminal 33 to the power-supplynegative terminal 43, and discharge through the gate discharge circuit24 a is also started. With electric power thus discharged through boththe current source 27 and the gate discharge circuit 24 a, the gatevoltage Vcm is rapidly lowered. The total capacitance Ccm of the gatecapacitance of the first transistor 1 b and the gate capacitance of thesecond transistor 2 b, voltage difference dVcg between the power-supplypositive terminal 39 and the power-supply negative terminal 43, and thegate threshold voltage Vth of the first transistor 1 b and the secondtransistor 2 b, are determined so as to satisfy the relationship of thefollowing expression (7).Vth≥dVcg·Ccm/(Ccg+Ccm)  (7)

As described above, [dVcg·Ccm/(Ccg+Ccm)] is the gate voltage Vcmrealized by the voltage difference dVcg. In FIG. 7, the voltage Vcm1corresponds to [dVcg·Ccm/(Ccg+Ccm)]. Since the gate threshold voltageVth is higher than the voltage Vcm1, the first and second transistors 1b, 2 b switch from OFF to ON while electric power is kept dischargedfrom the gate discharge circuit 24 a. At time t2, the gate voltage Vcmbecomes lower than the gate threshold voltage Vth, and the firsttransistor 1 b and the second transistor 2 b switch from OFF to ON.Accordingly, the drain currents Id1, Id2 start flowing from time t2, andthe voltage Vout of the output terminal 12 starts rising.

At time t3, the gate voltage Vcm reaches the voltage Vcm1. At time t3,the gate discharge circuit 24 a becomes unable to discharge electricpower from the first transistor 1 b to the power-supply negativeterminal 43 through the capacitor 26. Namely, the discharge through thegate discharge circuit 24 a is automatically stopped, at a point in timeat which the gate voltage Vcm reaches the voltage Vcm1. After time t3,only the discharge through the current source 27 is continued.Therefore, after time t3, the rate of increase of the drain current Id1of the first transistor 1 b is reduced. At time t4, the drain currentId1 reaches the current upper-limit value Idmax of the current source27. After time t4, the drain current Id1 of the current upper-limitvalue Idmax keeps flowing through the first transistor 1 b. After timet2, drain current Id2, which is obtained by multiplying the draincurrent Id1 of the first transistor 1 b by [M2/M1], flows through thesecond transistor 21. The drain current Id2 of the second transistor 2 bflows from the power-supply positive terminal 31 into the gate of thepower transistor 99. As the drain current Id2 flows through the secondtransistor 2 b, the gate voltage of the power transistor 99, namely, thevoltage of the output terminal 12 (output terminal voltage Vout), rises.When a potential difference between the power-supply positive terminal31 and the output terminal voltage Vout becomes too small to causecurrent of Id2=Id1×(M2/M1) to flow, the drain current Id2 of the secondtransistor 2 a is reduced, and the drain current Id2 becomes equal tozero at time t5. At this time, the output terminal voltage Vout becomesequal to the voltage VCC1 of the power-supply positive terminal 31.Between time t4 and time t5, the power transistor 99 switches from OFFto ON when the output terminal voltage Vout exceeds the gate thresholdvoltage of the power transistor 99.

After time t4, the gate voltage Vcm is equal to the input terminalvoltage VLref of the current source 27 at the time when current of thecurrent upper-limit value Idmax flows between the drain and source ofthe first transistor 1 b.

When the gate discharge circuit 24 a is not provided, there is noperiod, like the period between time t1 and time t3 in the time chart ofFIG. 7, in which the gate voltage Vcm is rapidly lowered. When the gatedischarge circuit 24 a is not provided, the rate of reduction of thegate voltage Vcm between time t3 and time t4 of FIG. 7 starts from timet1. Therefore, when the gate discharge circuit 24 a is not provided, thetime at which the gate voltage Vcm becomes lower than the gate thresholdvoltage Vth is later than that in the case of FIG. 7. Meanwhile, thegate discharge circuit 24 a does not increase the drain current of thefirst transistor 1 b. Accordingly, the drive unit 10 d including thegate discharge circuit 24 a can shorten the length of time fromreceiving of the drive signal Vin1 to driving of the power transistor99, without increasing the drain current of the first transistor 1 b ofthe current mirror circuit 15 b.

In the drive unit 10 d of the fourth embodiment, when, the drive signalvial switches from the high level to the low level, discharge throughthe current source 27 is started, and the gate discharge circuit 24 alsostarts discharging. When the amount of discharge of the gate dischargecircuit 24 a per unit time is larger than the amount of discharge of thecurrent source 27 per unit time, a given time difference may be providedbetween start of discharge of the gate discharge circuit 24 a and startof discharge through the current source 27. For example, the gatedischarge circuit 24 a starts discharging, immediately after switchingof the drive signal Vin1 from the high level to the low level, and thecurrent control circuit 22 switches the current source 27 from thecutoff state to the conducting state, and starts discharging, afterwaiting for the given time difference after switching of the drivesignal Vin1. The time difference is, for example, time it takes the gatevoltage Vcm to reach the lowest voltage Vcm1=[dVcg·Ccm/(Ccg+Ccm)] owingto the gate discharge circuit 24 a.

Fifth Embodiment

Referring to FIG. 8, a fifth embodiment will be described. A drive unit106 of the fifth embodiment also employs voltage-driven type P-channeltransistors in its current mirror circuit. In the drive unit 10 d of thefourth embodiment, the second transistor 2 b is connected between thepower-supply positive terminal 31 and the output terminal 12, and theresistor 18 and the sixth transistor 6 b are connected between theoutput terminal 12 and the power-supply negative terminal 41. In thedrive unit 10 e of the fifth embodiment, the resistor 18 and a sixthtransistor 1061 are connected between the power-supply positive terminal31 and the output terminal 12, and the second transistor 2 b of thecurrent mirror circuit 15 b is connected between the output terminal 12and the power-supply negative terminal 41. The gate of the sixthtransistor 106 b is connected to the NOT device 13, and the inversionsignal Vin1 x is transmitted to the gate of the sixth, transistor 106 b.The power-supply positive terminal 32 is controlled to be at the samevoltage as the output terminal 12.

When the drive unit 10 e receives a drive signal Vin1 that switches froma high level (High) to a low level (Low), the sixth transistor 106 bswitches from ON to OFF, and the second transistor 2 b switches from OFFto ON. As a result, the potential of the output terminal 12 is loweredfrom the potential of the power-supply positive terminal 31 to thepotential of the power-supply negative terminal 41, and the powertransistor 99 switches from ON to OFF.

The functions of the current mirror circuit 15 b, gate discharge circuit24 b, current control circuit 22, and the current source 27 in the driveunit 10 e of FIG. 8 are the same as those of the drive unit 10 d of thefourth embodiment, and therefore, will not be described in detail. Inthe drive unit 10 d of the fourth embodiment of FIG. 6, the secondtransistor 2 b of the current Mirror circuit 15 b is connected betweenthe output terminal 12 and the power-supply positive terminal 31. In thedrive unit 10 e of the fifth embodiment, the second transistor 2 b isconnected between the power-supply negative terminal 41 and the outputterminal 12. However, the function and effect of the gate dischargecircuit 24 a are identical with those in the case of the drive unit 10 dof FIG. 6. Like the drive unit 10 d of FIG. 6, the drive unit 10 e ofFIG. 8 can shorten the length of time from receiving of the drive signalVin1 to driving of the power transistor 99, while suppressing orreducing electric power consumption.

A point to note in connection with the fourth and fifth embodiments willbe described. In the drive unit 10 d of the fourth embodiment, eachparameter is set so that the relationship of the above expression (7) issatisfied. When the relationship of the expression (7) is not satisfied,the gate voltage Vcm becomes lower than the gate threshold voltage Vthat a point in time between time t3 and time t4 in FIG. 7, and the firsttransistor 1 b and the second transistor 2 b switch from OFF to ON. Inthis case, too, the first and second transistors 1 b, 2 b can beswitched in a shorter time, as compared with the case where no gatecharge circuit is provided. The same point to note is applied to thefifth embodiment.

Sixth Embodiment

Referring to FIG. 9, a drive unit 10.f of a sixth embodiment will bedescribed. The drive unit 10 f of the sixth embodiment also employsvoltage-driven type P-channel transistors in its current mirror circuit.The drive unit 10 f of the sixth embodiment has a gate discharge circuit24 b that is different from the gate discharge circuit 24 a of the driveunit 10 d of the fourth embodiment. In the block diagram of FIG. 9, thedevices other than the gate discharge circuit 24 b are identical withthe devices shown in the block diagram of FIG. 6, and therefore, willnot be described.

Like the gate discharge circuit 24 a of the fourth embodiment, the gatedischarge circuit 24 b is connected to the drain and gate of the firsttransistor 1 b, and the gate of the second transistor 2 b. The gatedischarge circuit 24 b consists of the power-supply negative terminal 43that is held at voltage VLcg, voltage-driven type N-channel fourthtransistor 104 b, and a diode 29. An anode 29 a of the diode 29 isconnected to the drain and gate of the first transistor 1 b, and thegate of the second transistor 2 b. A cathode 29 b of the diode 29 isconnected to the power-supply negative terminal 43 via the fourthtransistor 104 b. The gate of the fourth transistor 104 b is connectedto the input terminal 11 via the NOT device 13. Namely, the fourthtransistor 104 b functions as a switch for switching the connectingstate between the power-supply negative terminal 43 and the first andsecond transistors 1 b, 2 b from the cutoff state to the conductingstate, in response to the drive signal Vin1.

The input terminal voltage VLref of the current source 27 when the firsttransistor 1 b is ON, and current of the current upper-limit value Idmaxflows between the drain and source of the first transistor 1 b throughthe current source 27, forward voltage Vf of the diode 29, and thevoltage VLcg of the power-supply negative terminal 43 are determined soas to satisfy the relationship of the following expression (6).VLcg+Vf≥VLref  (6)

The power-supply negative terminal 43 is a low-voltage terminal fordischarging the gates of the first and second transistors 1 b, 2 b inthe gate discharge circuit 24 b. The left side of the above expression(6) means the lowest voltage of the gate voltage Vcm when the currentsource 27 is in the cutoff state. Also, the forward voltage Vg, voltageVLcg of the power-supply negative terminal 43, and the gate thresholdvoltage Vth of the first and second transistors 1 a, 2 a are determinedso as to satisfy the following expression (8).Vth≥VLcg+Vf  (8)

Like the drive unit 10 d of the fourth embodiment, the drive writ 10 fswitches the power transistor 99 from OFF to ON, when the potential ofthe pulsed drive signal Vin1 received by the input terminal 11 switchesfrom a high level (High) to a low level (Low). The operation of thedrive unit 10 f mainly, that of the gate discharge circuit 24 b, will bedescribed.

When the drive signal Vin1 switches from the high level to the lowlevel, the current control circuit 22 switches the current source 27connected between the power-supply negative terminal 42 and the firsttransistor 1 b, from the cutoff state to the conducting state. As aresult, gate discharge of the first and second transistors 1 b, 2 bthrough the current source 27 is started. At the same time, the fourthtransistor 104 b switches from OFF to ON, in response to the inversionsignal Vin1 x of the drive signal Vin1, and the connecting state betweenthe power-supply negative terminal 43 and the first and secondtransistors 1 b, 2 b switches from the cutoff state to the conductingstate. The gate discharge circuit 24 b discharges the gates of the firstand second transistors 1 b, 2 b without involving the current source 27.The gates of the first and second transistors 1 b, 2 b are dischargedthrough both of the gate discharge circuit 24 b and the current source27, until the gate voltage Vcm of the first and second transistors 1 b,2 b is reduced to [VLcg+Vf]. As a result, the gate voltage Vent rapidlydrops. When the gate voltage Vcm reaches [VLcg+Vf], discharge throughthe gate discharge circuit 24 b is automatically stopped. According tothe expression (8), the first and second transistors 1 b, 2 b switchfrom OFF to ON by the time when the gate voltage Vcm reaches [VLcg+Vf].As a result, the drain current starts flowing through the first andsecond transistors 1 b, 2 b.

According to the relationship of the expression (6), electric powercontinues to be discharged through the current source 27 even after thegate voltage Vcm reaches [VLcg+Vf]. When the gate voltage Vcm becomeslower than [VLcg+Vf], the diode 29 prevents counter now of current fromthe power-supply negative terminal 43 to the gates of the first andsecond transistors 1 b, 2 b. Accordingly, the gate voltage Vcm drops tobe lower than [VLcg+Vf], by discharge through the power-supply negativeterminal 42 and the current source 27.

After the gate voltage Vcm becomes lower than [VLcg+Vf], the gatevoltage Vcm drops down to the voltage VLref, by discharge through thecurrent source 27, and the drain current Id1 flowing through the firsttransistor 1 b increases up to the current upper-limit value Idmax.Thereafter, the gate voltage Vcm is kept at the voltage VLref, and thecurrent of the current upper-limit value Idmax keeps flowing through thefirst transistor 1 b.

When the second transistor 2 b, as well as the first transistor 1 b,switches from OFF to ON, the drain current Id2 flows through the secondtransistor 2 b, and the voltage Vout of the output terminal 12 rises.When the voltage Vout of the output terminal 12 exceeds the gate voltageof the power transistor 99, the power transistor 99 switches from OFF toON.

The operation of the drive unit 10 f is identical with that of the driveunit 10 d shown in the time chart of FIG. 7. It is, however, to be notedthat Vcm1 of FIG. 7 corresponds to [VLcg+Vf]. Like the drive unit 10 dof the fourth embodiment, the drive unit 10 f of the sixth embodimentcan shorten the length of time from receiving of the drive signal todriving of the power transistor 99, without increasing the electricpower consumption of the first transistor 1 b.

The gate discharge circuit 24 a of the drive unit 10 e of the fifthembodiment as described above referring to FIG. 8 may be replaced withthe gate discharge circuit 24 b using the diode 29.

In the drive unit 10 f of the sixth embodiment, each parameter is set soas to satisfy the relationship of the above expression (8). However,when the relationship of the expression (8) is not satisfied, the gatevoltage Vcm becomes lower than the gate threshold voltage Vth at a pointin time between time t3 and time t4 of FIG. 7, and the first transistor1 a and the second transistor 2 a switch from OFF to ON. In this case,too, the first transistor 1 a and the second transistor 2 a can beswitched in a shorter time, as compared with the case where no gatecharge circuit is provided.

Seventh Embodiment

Referring next to FIG. 10 and FIG. 11, a drive unit 10 g of a seventhembodiment will be described. FIG. 10 is a block diagram of the driveunit 10 g, and FIG. 11 is a time chart of the drive unit 10 g. The driveunit 10 g includes a current mirror circuit using voltage-driven typeN-channel transistors.

The drive unit 10 g includes a voltage adjustment circuit 50 a forappropriately adjusting the voltage Vcg of the power-supply positiveterminal 33 of the gate charge circuit 14 a, in the drive unit 10 a ofthe first embodiment. A voltage output terminal 54 of the voltageadjustment circuit 50 a is connected to the power-supply positiveterminal 33 of the gate charge circuit 14 a. In FIG. 10, a line thatconnects the voltage output terminal 54 with the power-supply positiveterminal 33 is not depicted, for the sake of convenience.

In the drive unit 10 g, the circuit other than the voltage adjustmentcircuit 50 a is identical with the circuit shown in FIG. 1, andtherefore, will not be described. However, in this embodiment, all ofthe power-supply negative terminals 41-42, 43, 49 of the circuit of FIG.1 are held at the same potential (the ground potential of the drive unit10 g); therefore, in this embodiment, the power-supply negativeterminals 41, 42, 43, 49 in FIG. 1 will be collectively called “commonground terminal 48”. In the following, the voltage adjustment circuit 50a will be described.

The voltage adjustment circuit 50 a includes a power-supply positiveterminal 51, current source 52, filter capacitor 53, and voltage-driventype N-channel transistors 55, 56. Here, transistors having the samecharacteristics as the first transistor 1 a of the current mirrorcircuit 15 a are employed as the transistors 55, 56. Also, the currentsource 52 has the same characteristics as the current source 17, andoperates with the same current upper-limit value Idmax and the sameoutput terminal voltage Vref as the current source 17. Also, as thecapacitor 16 of the gate charge circuit 14 a, a capacitor of which thecapacitance Ccg is equal to the total capacitance Ccm of the gatecapacitance of the first transistor 1 a and the gate capacitance of thesecond transistor 2 a is employed.

The transistors 55, 56 are connected in series between the power-supplypositive terminal 51 and the common ground terminal 48. The gate anddrain of the transistor 55 are connected to each other, and the gate anddrain of the transistor 56 are also connected to each other. A givenvoltage is applied to the power-supply positive terminal 51. Forexample, the voltage applied to the power-supply positive terminal 51may be the same as the voltage VCC2 of the power-supply positiveterminal 32 that supplies electric power to the first transistor 1 a.The current source 52 is connected between the high-potential-sidetransistor 55 and the power-supply positive terminal 51. The drain ofthe high-potential-side transistor 55 is connected to the voltage outputterminal 54 of the voltage adjustment circuit 50 a. The filter capacitor53 that suppresses or reduces voltage fluctuations of the voltage outputterminal 54 is connected between the voltage output terminal 54 and thecommon ground terminal 48.

As explained above in the description of the drive unit 10 a of thefirst embodiment, the gate voltage Vcm developed by the voltage Vcg ofthe power-supply positive terminal 33 is expressed asVcm=[Vcg×Ccg/(Ccg+Ccm)], where Ccg denotes the capacitance of thecapacitor 16. Here, the capacitance Ccg of the capacitor 16 is selectedto be equal to the total capacitance Ccm of the gates. Therefore, Vcm isequal to Vcg/2, (Vcm=Vcg/2).

In the meantime, in the voltage adjustment circuit 50 a, Vcg is equal toV₅₅+V₅₆ (Vcg=V₅₅+V₅₆), where symbol V₅₅ denotes the gate voltage of thetransistor 55, and symbol V₅₆ denotes the gate voltage of the transistor56. Since first transistor 1 a, transistor 55, and the transistor 56have the same characteristics, and the same magnitude of current flowsthrough these transistors, Vgs=V₅₅V₅₆. Here, Vgs denotes a target ONvoltage of the first transistor 1 a. The target ON voltage is the gatevoltage for holding the first transistor 1 a in the ON state, and theoutput terminal voltage Vref of the current source 17 at the time whenthe gate voltage causes current of the current upper-limit value Idmaxto flow between the drain and source of the first transistor 1 acorresponds to the target ON voltage Vgs.

It follows from the above relationships thatVcm=Vcg/2=(V₅₅+V₅₆)/2=2Vgs/2=Vgs. On the other hand, the output voltageVref of the current source 17 at the time when current of the currentupper-limit value Idmax flows between the drain and source of the firsttransistor 1 a corresponds to the target ON voltage Vgs of the firsttransistor 1 a, as stated above. Namely, when the gate charge circuit 14a is operated, using the voltage adjustment circuit 50 a, the gatecharge circuit 14 a raises the gate voltage Vcm of the first and secondtransistors 1 a, 2 a to the target ON voltage Vgs, i.e., to the outputterminal voltage Vref of the current source 17. FIG. 11 shows a timechart of the drive unit 10 g of FIG. 10. At time t1 the drive signalVin1 switches from a low level (Low) to a high level (High), and thegate charge circuit 14 a and the current source 17 start supplyingelectric power. With the power supplied from the gate charge circuit 14a, the gate voltage Vcm of the first and second transistors 1 a, 2 a israised straight to Vref (Vcm2). In the time chart of FIG. 2 as describedabove, the gate voltage Vcm reaches the maximum output voltage Vcm1(=Vcg·Ccg/(Ccg+Ccm)) of the gate charge circuit 14 a at time t3 in FIG.2. In the drive unit 10 g of FIG. 10, the maximum output voltage Vcm1 ofthe gate charge circuit 14 a is adjusted to be equal to the voltageVref. Thus, in the time chart of FIG. 11, time t3 and time t4 in thetime chart of FIG. 2 become the same point in time. At time t4 in FIG.2, the gate voltage Vcm reaches Vcm2, i.e., the output terminal voltageVref of the current source 17. In the drive unit 10 g of FIG. 10, theoutput voltage of the gate charge circuit 14 a is optimally adjusted;therefore, the gate voltage Vin1 of the first and second transistors 1a, 2 a is raised straight to the target ON voltage (voltage Vref).Therefore, the length of time it takes until the voltage Vout of theoutput terminal 12 is lowered down to zero can be further shortened.Namely the drive unit 10 g of FIG. 10 makes it possible to furthershorten the time from receiving of the drive signal Vin1 to driving ofthe power transistor 99.

The seventh embodiment corresponds to the case where the aboveexpression (1) in which the equal sign is used is satisfied. In thedrive unit 10 g, the gate charge circuit 14 a stops charging at a pointin time at which the gate voltage Vcm reaches the output terminalvoltage Vref of the current source 17. In the drive unit 10 g of theseventh embodiment, the voltage of the voltage output terminal 54(namely, the voltage Vcg of the power-supply positive terminal 33 of thegate charge circuit 14 a) is determined based on the voltage of thecommon ground terminal 48. Therefore, even if the voltage of thepower-supply positive terminal 51 fluctuates, the gate charge circuit 14a always stops charging at the time when the gate voltage Vcm reachesthe output terminal voltage Vref of the current source 17.

Eighth Embodiment

Referring to FIG. 12, a drive unit 10 h of an eighth embodiment will bedescribed. FIG. 12 is a block diagram of the drive unit 10 h of theeighth embodiment. The drive unit 10 h of the eighth embodiment is amodified example of the drive unit 10 g (see FIG. 10) of the seventhembodiment. In the drive unit 10 h, the devices other than a voltageadjustment circuit 50 b are identical with those of the drive unit 10 gof FIG. 10, and therefore, will not be described.

The drive unit 10 h of the eighth embodiment includes the voltageadjustment circuit 50 b. The voltage adjustment circuit 50 a of thedrive unit 10 g of the previous embodiment includes the two transistors55, 56 connected in series. The voltage adjustment circuit 50 b of thedrive unit 10 h shown in FIG. 12 includes four transistors 55, 56, 57,58 connected in series. The configuration of the voltage adjustmentcircuit 50 b is identical with that of the voltage adjustment circuit 50a, except that the transistors 57, 58 are additionally provided.Transistors having the same characteristics as the first transistor 1 aare employed as the transistors 55, 56, 57, 58. In the voltageadjustment circuit 50 b the current source 52 has the samecharacteristics as the current source 17, and has the same currentupper-limit value Idmax and the output terminal voltage Vref as thecurrent source 17, as in the voltage adjustment circuit 50 a of theprevious embodiment. In the meantime, as the capacitor 16 of the gatecharge circuit 14 a, a capacitor whose capacitance Ccg is one third ofthe total capacitance Ccm of the gate capacitance of the firsttransistor 1 a and the gate capacitance of the second transistor 2 a isselected.

The relationship between the voltage Vcg of the power-supply positiveterminal 33 of the gate charge circuit 14 a, and the output terminalvoltage Vref of the current source 17 will be described. The gatevoltage Vcm provided by the voltage Vcg is expressed asVcm=[Vcg×Ccg/(Ccg+Ccm)]. Since Ccg is equal to Ccm/4 (Ccg=Ccm/4), Vcg isequal to 4Vcm (Vcg=4Vcm). In the meantime, the transistors 55, 56, 57,58 have the same characteristics as the first transistor 1 a, and thesame current flows through these transistors; therefore,Vgs=V₅₅=V₅₆=V₅₇=V₅₈. As in the case of the seventh embodiment, Vgsdenotes the target ON voltage of the first transistor 1 a. The target ONvoltage is the gate voltage established when the first transistor 1.a isheld in the ON state, and the output terminal voltage Vref of thecurrent source 17 at the time when it delivers current of the currentupper-limit value Idmax corresponds to the target ON voltage Vgs. Fromthe above relationships, Vcm=Vcg/4=(V₅₅+V₅₆+V₅₇+V₅₈)/4=4Vgs/4=Vgs=Vref.Namely, in the case of the eighth embodiment, too, the gate voltage Vcmof the first and second transistors 1 a, 2 a, when charged by the gatecharge circuit 14 a, reaches the output terminal voltage Vref of thecurrent source 17, i.e., the target ON voltage. The operation of thedrive unit 10 h including the voltage adjustment circuit 50 b is thesame as that of the drive unit 10 g of the seventh embodiment. The driveunit 10 h of the eighth embodiment is different from the drive unit 10 gof the seventh embodiment in that, in the drive unit 10 h of the eighthembodiment, the capacitance of the capacitor of the gate charge circuit14 a can be reduced to one third of the total capacitance Ccm. This isrealized by increasing the number of transistors of the voltageadjustment circuit 50 b, and raising Vcg.

The following conclusion is derived from the above explanationconcerning the eighth embodiment. Where “n” denotes the number oftransistors connected in series between the current source 52 of thevoltage adjustment circuit 50 b and the common ground terminal 48, thecapacitance Ccg of the capacitor 16 of the gate charge circuit 14 a canbe made equal to 1/n of the total capacitance Ccm.

Ninth Embodiment

Referring next to FIG. 13 to FIG. 15, a drive unit 10 j of a ninthembodiment will be described. FIG. 13 is a block diagram of the driveunit 10 j of the ninth embodiment. The drive unit 10 j of the ninthembodiment includes a charge control circuit 60, in addition to thedrive unit 10 a of the first embodiment. The drive unit 10 j changes theoutput current of the current source 17, during driving (ON/OFFswitching) of the power transistor 99 to be driven. The charge controlcircuit 60 quickly adjusts the gate voltage of the first and secondtransistors 1 a, 2 a, according to change of the output current of thecurrent source 17.

An output terminal of the charge control circuit 60 is connected to anoutput terminal of the gate charge circuit 14 a (i.e., the electrode 16a of the capacitor 16). The charge control circuit 60 has the samestructure as the gate charge circuit 14 a. In the drive unit 10 j of theninth embodiment, too, the power-supply negative terminals 41, 42, 43,49 in the drive unit 10 a of the first embodiment are held at the samepotential (the ground potential of the drive unit), and these terminalswill be collectively called “common ground terminal 48”.

The structure of the charge control circuit 60 will be described. Thecircuit structure of the charge control circuit 60 is identical withthat of the gate charge circuit 14 a. The charge control circuit 60consists of a power-supply positive terminal 61 to which voltage VCC3 issupplied, common ground terminal 48, two transistors 62, 63, and acapacitor 64. The transistor 62 is a P-channel MOSFET, and thetransistor 63 is an tri-channel MOSFET. The transistors 62, 63 areconnected in series between the power-supply positive terminal 61 andthe common ground terminal 48. More specifically, the source of thetransistor 62 is connected to the power-supply positive terminal 61, andthe drain is connected to the drain of the transistor 63. The source ofthe transistor 63 is connected to the common ground terminal 48. Oneelectrode of the capacitor 64 is connected to one electrode 16 a of thecapacitor 16 of the gate charge circuit 14 a. The other electrode of thecapacitor 64 is connected to a middle point between the transistors 62,63 connected in series.

The gates of the transistors 62, 63 are connected to a sub inputterminal 11 a. A pulsed current adjustment signal Vin2 is transmittedfrom a high-order control unit (not shown) to the sub input terminal 11a. The current adjustment signal Vin2 is transmitted to the currentcontrol circuit 21. The current control circuit 21 changes the magnitude(current upper-limit value) of the output current of the current source17, in response to the current adjustment signal Vin2. The currentsource 17 can change the current (drain current) flowing between thedrain and source of the first transistor 1 a, from Idmax to Idmax2. Thecurrent values Idmax and Idmax2 will be called “current upper-limitvalue”. The output terminal voltage of the current source 17 is Vrefwhen the current source 17 limits the drain current to the currentupper-limit value Idmax, and the output terminal voltage of the currentsource 17 is Vref2 when the drain current is limited to the currentupper-limit value Idmax2. Here, the voltage Vref is lower than thevoltage Vref2.

The gates of the transistors 62, 63 of the charge control circuit 40 areconnected to the sub input terminal 11 a, and the pulsed currentadjustment signal Vin2 is also transmitted to the gates of thetransistors 62, 63. When the current adjustment signal Vin2 is at a highlevel (High), the transistor 62 is held in the OFF state, and thetransistor 63 is held in the ON state. As a result, the capacitor 64 isconnected to the common ground terminal 48, and the capacitor 64 isplaced in a discharged state. When the current adjustment signal Vin2 isat a low level (Low), the transistor 62 is held in the ON state, and thetransistor 63 is held in the OFF state. As a result, the capacitor 64 isconnected to the power-supply positive terminal 61, and the capacitor 64is charged. While the capacitor 64 is shifting from the discharged stateto the charged state, electric power is supplied from the capacitor 64to the first transistor 1 a of the current mirror circuit 15 a.

The function of the charge, control circuit 60 will be described, usingthe time charts of FIG. 14 and FIG. 15. Initially, the time chart ofFIG. 14 will be described. The time chart of FIG. 14 illustrates thecase where the current upper-limit value set for the current source 17is increased from Idmax to Idmax2. As described above, the outputterminal voltage of the current source 17 is Vref when the currentupper-limit value is Idmax, and the output terminal voltage increases toVref2 when the current upper-limit value is Idmax2. The movements fromtime t1 to time, t4 are identical with those of the time chart shown inFIG. 2, and therefore, will not be described.

The current adjustment signal Vin2 as a signal for changing the currentupper-limit value switches from a high level (High) to a low level (Low)at time tb. The current control circuit 21 raises the currentupper-limit value of the current source 17 from Idmax to Idmax2, inresponse to the current adjustment signal Vin2. The magnitude of thedrain current of the first transistor 1 a is determined by the gatevoltage of the first transistor 1 a. If the output current of thecurrent source 17 is changed, a part of the output current of thecurrent source 17 (=current upper-limit value Idmax2) flows into thegate of the first transistor 1 a, and raises the gate voltage. Since thegate of the first transistor 1 a is connected with the gate of thesecond transistor 2 a, the gates of both of the first and secondtransistors 1 a, 2 a are charged with a part of the output current ofthe current source 17 (=current upper-limit value Idmax2). If Idmax2 issmall, the gate voltage rises only gradually, and the drain current ofthe first transistor 1 a changes only gradually. The charge controlcircuit 60 quickly adjusts the gate voltage of the first and secondtransistors 1 a, 2 a when it increases the output current of the currentsource 17.

The current adjustment signal Vin2 is also transmitted to the chargecontrol circuit 60. If the current adjustment signal Vin1 switches fromthe high level to the low level, the transistor 62 switches from OFF toON, and the transistor 63 switches from ON to OFF, in the charge controlcircuit 60. Then, the destination to which the capacitor 64 is connectedswitches from the common ground terminal 48 to the power-supply positiveterminal 61, and the capacitor 64 starts being charged. Until thecapacitor 64 is fully charged, electric power is supplied from thepower-supply positive terminal 61 to the gates of the first and secondtransistors 1 a, 2 a via the capacitor 64. Therefore, immediately aftertime tb, the gate voltage Vcm of the first and second transistors 1 a, 2a is rapidly raised from Vcm2 to Vcm3. As the gate voltage Vcmincreases, the drain current Id1 of the first transistor 1 a quicklyincreases from Idmax to Idmax2. Since the drain current Id1 of the firsttransistor 1 a increases, the current becomes more likely to flowthrough the second transistor 2 a that before, and the voltage of thedrain of the second transistor 2 a, namely, the voltage Vout of theoutput terminal 12, is reduced at an increased rate or more rapidly.Thus, time t5 at which the voltage Vout of the output terminal 12reaches zero becomes earlier than that in the case of the time chart ofFIG. 2. In FIG. 14, Vcm2 corresponds to the output terminal voltage Vrefat the time when the current source 17 delivers current of the currentupper-limit value Idmax as the drain current of the first transistor 1a. Also, Vcm3 corresponds to the output terminal voltage Vref2 (>Vref)at the time when the current source 17 delivers current of the currentupper-limit value Idmax2 (>Idmax) as the drain current.

The time chart of FIG. 15 will be described. The time chart of FIG. 15illustrates the case where the current control circuit 21 reduces thecurrent upper-limit value of the current source 17 from Idmax to Idmax3.The output terminal voltage of the current source 17 is Vref when thecurrent upper-limit value is Idmax, and the output terminal voltage isreduced to Vref3 when the current upper-limit value is Idmax3. Themovements from time t1 to time t4 are identical with those of the timechart shown in FIG. 2, and therefore, will not be described.

The current adjustment signal Vin2 as a signal for changing the currentupper-limit value switches from a low level (Low) to a high level (High)at time tc. The current control circuit 21 reduces the currentupper-limit value of the current source 17 from Idmax to Idmax3, inresponse to the current adjustment signal Vin2. If the currentadjustment signal Vin2 switches from the low level to the high level,the transistor switches from ON to OFF, and the transistor 63 switchesfrom OFF to ON, in the charge control circuit 60. Then, the destinationto which the capacitor 64 is connected switches from the power-supplypositive terminal 61 to the common ground terminal 48, and a certainamount of electric power is discharged from the gates of the first andsecond transistors 1 a, 2 a via the common ground terminal 48.Therefore, immediately after time tc, the gate voltage Vcm of the firstand second transistors 1 a, 2 a is rapidly reduced from Vcm2 to Vcm4. InFIG. 15, Vcm2 corresponds to the output terminal voltage Vref at thetime when the current source 17 delivers current of the currentupper-limit value Idmax, and Vcm3 corresponds to the output terminalvoltage Vref3 (<Vref) at the time when the current source 17 deliverscurrent of the current upper lima value Idmax3 (<Idmax).

As the gate voltage Vcm is rapidly reduced, the drain current Id1 of thefirst transistor 1 a is quickly reduced from Idmax to Idmax3. Since thedrain current Id1 of the first transistor 1 a is reduced, the draincurrent Id2 of the second transistor 2 b is also reduced, and thevoltage of the drain of the second transistor 2 a, namely, the voltageVout of the output terminal 12, is reduced at a reduced rate of moreslowly. Thus, time t5 which the voltage gout of the output terminal 12reaches zero becomes later than that in the case of the time chart ofFIG. 2.

In the time chart of FIG. 14, when the current adjustment signal Vin2 isreceived at time tb, the gate voltage Vcm changes quickly, and the draincurrent Id1 quickly changes from Idmax to Idmax2. Then, the draincurrent Id2 of the second transistor 2 a also changes quickly. In thetime chart of FIG. 15, when the current adjustment signal Vin2 isreceived at time tc, the gate voltage Vcm changes quickly, and the draincurrent Id1 quickly changes from Idmax to Idmax3. Then, the draincurrent Id2 of the second transistor 2 a also changes quickly. In thedrive unit 10 j of the ninth embodiment, the gate voltage of the firsttransistor 1 a of the current mirror circuit 15 a can be changedquickly, and the drain currents Id1, Id2 of the first and secondtransistors 1 a, 2 a can be changed quickly. The charge control circuit60 in the drive unit 10 j of the ninth embodiment is an application ofthe technology of the gate charge circuit 14 a.

Tenth Embodiment

Referring to FIG. 16 and FIG. 17, a drive unit 10 k of a tenthembodiment will be described. FIG. 16 is a block diagram of the driveunit 10 k. FIG. 17 is a time chart of operation of the drive unit 10 k.The drive unit 10 k includes a sub input terminal 11 b and a seventhtransistor 7, in addition to the drive unit 10 a of the firstembodiment. The seventh transistor 7 functions as a switch (cutoffswitch) that cuts off current (main current) flowing between the drainand source of the first transistor 1 a after the first and secondtransistors 1 a, 2 a switch from OFF to ON. The configuration of thedrive unit 10 k other than the sub input terminal 11 b and the seventhtransistor 7 is identical with that of the drive unit 10 a of FIG. 1,and the movements up to time t4 of FIG. 17 are identical with those ofthe time chart of FIG. 2, and therefore, will not be described.

The sub input terminal 11 b receives a command signal (cutoff commandsignal Vin3) for disconnecting the first transistor 1 a from thecircuit, from a high-order control unit (not shown). The cutoff commandsignal Vin3 is also a pulsed signal, and is held at a high level (High)at first. A falling edge at which the signal switches from the highlevel to the high level corresponds to a command to shut off the firsttransistor 1 a.

The seventh transistor 7 is connected between the first transistor 1 aand a connection point P1. At the connection point P1, thehigh-potential-side electrode and gate of the first transistor 1 a areconnected with the capacitor 16. The gate of the seventh transistor 7 isconnected to the sub input terminal 11 b. The seventh transistor 7,which is an N-channel MOSFET, is in the ON state while the gate voltageis held at a high potential, and is turned off when the gate voltage isreduced to a low potential. As described above, the cutoff commandsignal Vin3 is held at the high level at first, and the seventhtransistor 7 is held in the ON state. While the seventh transistor 7 isin the ON state, the drive unit 10 k operates in the same manner as thedrive unit 10 a of the first embodiment.

Referring to the time chart of FIG. 17, the function of the seventhtransistor 7 and the operation of the drive unit 10 k will be described.The cutoff command signal Vin3 switches from the high level (High) tothe low level (Low) at time td. Before time td, the first and secondtransistors 1 a, 2 a of the current mirror circuit 15 a of the driveunit 10 k switch from OFF to ON at time t2. At time t4, the draincurrent Id1 of the first transistor 1 a reaches the current upper-limitvalue Idmax. In the drive unit 10 a of FIG. 1, after time t4, a constantcurrent (current upper-limit value Idmax) keeps flowing as the draincurrent Id1 of the first transistor 1 a (see FIG. 2). In the drive unit10 k of the tenth embodiment, the cutoff command signal Vin3 switchesfrom the high level to the low level, at time td that is later than timet4. The seventh transistor 7 switches from ON to OFF at time td, inresponse to the cutoff command signal Vin3. If the seventh transistor 7is turned OFF, the drain (high-potential-side electrode) of the firsttransistor 1 a is brought into a cutoff state. Namely, after time td,the drain current Id1 of the first transistor 1 a becomes equal to zero.It is, however, to be noted that the current source 17 is kept connectedto the gates of the first and second transistors 1 a, 2 a, as shown inFIG. 16. If the drain of the first transistor 1 a is cut off, thecurrent of the current source 17 flows into the gates of the first andsecond transistors 1 a, 2 a, and the gate voltage Vcm increases. Sincethe gate voltage Vcm increases, the drain current Id2 of the secondtransistor 2 a increases. As a result, the rate of reduction of theoutput terminal voltage Vout is increased, and the output terminalvoltage Vout becomes equal to zero at an earlier point in time, ascompared with that in the time chart of FIG. 2.

In the drive unit 10 k of the tenth embodiment, the drain current of thefirst transistor 1 a becomes equal to zero after time td; therefore, theelectric power consumption can be suppressed or reduced to be smallerthan that of the drive unit 10 a of the first embodiment.

In the drive unit 10 k of the tenth embodiment, the seventh transistor 7is connected to the drain side of the first transistor 1 a. The seventhtransistor 7 may be connected to the source (low-potential-sideelectrode) side of the first transistor 1 a. The seventh transistor 7functions as a switch (cutoff switch) for cutting off current (maincurrent) flowing between the drain and source of the first transistor 1a, after the first and second transistors 1 a, 2 a switch from OFF toON. The cutoff switch may be provided by a device other than thetransistor. For example, the cutoff switch may be provided by anelectromagnetic relay.

Eleventh Embodiment

Referring next to FIG. 18 and FIG. 19, a drive unit 10 m of an eleventhembodiment will be described. FIG. 18 is a block diagram of the driveunit 10 m. FIG. 19 is a time chart of operation of the drive unit 10 m.The drive unit 10 m includes an eighth transistor 8, in addition to thedrive unit 10 k of the previous embodiment. The eighth transistor 8 isconnected between the connection point P1 and a power-supply positiveterminal 32 b. The power-supply positive terminal 32 b is held at thesame voltage VCC2 as that of the power-supply positive terminal 32connected to the input terminal of the current source 17. The eighthtransistor 8, which is a P-channel transistor, is OFF when the gatevoltage is at a high level (High), and is ON when the gate voltage is ata low level (Low). Also, the gate of the eighth transistor 8 isconnected to the sub input terminal 11 b. As in the case of the tenthembodiment, the cutoff command signal Vin3 that is normally held at ahigh level (High) is transmitted to the sub input terminal 11 b. Whilethe cutoff command signal Vin3 is held at the high level, the eighthtransistor 8 disconnects the power-supply positive terminal 32 b fromthe connection point P1. When the cutoff command signal Vin3 switches tothe low level, electric current is allowed to flow between thepower-supply positive terminal 32 b and the connection point P1.

Referring to the time chart of FIG. 19, operation of the drive unit 10 mwill be described. Prior to time t4, the operation shown in the timechart of FIG. 19 is identical with that of the time chart of FIG. 2.Like the drive unit 10 k of the previous embodiment, the drive unit 10 mreceives a cutoff command signal Vin3 that switches from a high level(High) to a low level (Low) at time td. With the cutoff command signalVin3 thus received, the seventh transistor 7 is turned off, and theeighth transistor 8 is turned on. With the seventh transistor 7 thusturned off, the drain current Id1 of the first transistor 1 a becomesequal to zero. With the eighth transistor 8 thus turned on, electricpower is supplied from both of the current source 17 and thepower-supply positive terminal 32 b to the gates of the first and secondtransistors 1 a, 2 a. After time td, electric current supplied to thefirst and second transistors 1 a, 2 a is increased, as compared with thecase of the drive unit 10 k of the previous embodiment. Therefore, therate of increase of the gate voltage Vcm after time td is increased, ascompared with the case of the drive unit 10 k. As a result, the rate ofincrease of the drain current Id2 of the second transistor 2 a isincreased, and the output terminal voltage Vout reaches zero at an evenearlier paint in time.

Like the drive unit 10 k of the tenth embodiment, the drive unit 10 m ofthe eleventh embodiment includes the seventh transistor 7 as a cutoffswitch, whereby electric power consumption of the first transistor 1 acan be further reduced. The drive unit 10 m of the eleventh embodimentincludes the eighth transistor 8, whereby the output terminal voltageVout can be reduced to zero more quickly or at a further increased rate.

The seventh transistor 7 (cutoff switch) of the tenth embodiment, andthe eighth transistor 8 of the eleventh embodiment, may be used in thedrive units of the second embodiment through the ninth embodiment.

A point to note in connection with the above embodiments will bedescribed. In the first to third embodiments and the seventh to eleventhembodiments in which the current source is located on the high potentialside of the first transistor 1 a, the current control circuit 21controls the current source 17. Namely, the current control circuit 21controls start of charging of the gate of the first transistor 1 a usingthe current source 17. The function of the current control circuit 21may be incorporated in the current source 17. Also, the current controlcircuit 21 may not be provided. In this case, the current controlcircuit 21 is replaced by the third transistor 3 a, and the NOT device13 that supplies the inversion signal Vin1 x of the drive signal Vin1 tothe gate of the third transistor 3 a. This replacement will be explainedwith regard to the case of the first embodiment of FIG. 1. Suppose thecurrent control circuit 21 is removed from the drive unit 10 a, and thecurrent source 17 delivers constant current at all times. While thedrive signal Vin1 is held at a low level (Low), a signal of a high level(High) is supplied to the gate of the third transistor 3 a, and thethird transistor 3 a is held in the ON state. At this time, the gates ofthe first and second transistors 1 a, 2 a are connected to thepower-supply negative terminal 49, and are held at the potential of thepower-supply negative terminal 49. Namely, the gates of the first andsecond transistors 1 a, 2 a are held at the low potential. Even if thecurrent source 17 keeps supplying constant current, the current flowsinto the power-supply negative terminal 49 via the third transistor 3 a,and the gates of the first and second transistors 1 a, 2 a are notcharged. If the drive signal Vin1 switches from the low level to thehigh level, the third transistor 3 a is turned off, and the gates of thefirst and second transistors 1 a, 2 a are disconnected from thepower-supply negative terminal 49. Since constant current is suppliedfrom the current source 17 at all times, the gates of the first andsecond transistors 1 a, 2 a start being charged with the current source17 when the third transistor 3 a is turned off. As described above, whenthe current control circuit 21 is removed from the drive unit 10 a, thethird transistor 3 a and the NOT device 13 correspond to the currentcontrol circuit that starts charging the gates of the first and secondtransistors 1 a, 2 a using the current source 17. It is, however, to benoted that the current control circuit 21 that switches the currentsource 17 from the output stopped state to the output state in responseto the drive signal Vin1 is advantageous in that the output current ofthe current source 17 is not wasted while the first transistor 1 a is inthe OFF state.

In the fourth to sixth embodiments, the current control circuit 22 maybe incorporated in the current source 27.

In the illustrated embodiments, the MOSFETs are employed in the currentmirror circuit. The transistors employed in the current mirror circuitare not limited to the MOSFETs, provided that they are of voltage driventype. The transistors employed in the current mirror circuit may beIGBTs.

According to the technology disclosed in this specification, transistorsother than the transistors used in the current mirror circuit are notlimited to any particular type. Also, the first transistor and thesecond transistor may be devices that are individually packaged, or maybe formed on a single substrate. The first transistor and the secondtransistor may be two transistors mounted in one chip.

In the drive units of the first to third embodiments and the seventh toeleventh embodiments, the voltage-driven type N-channel first and secondtransistors 1 a, 2 a are employed in the current mirror circuit. Thecurrent control circuit 21 of the embodiments function as one example of“current control circuit” and the current source 17 functions as oneexample of “current source”. The gate charge circuit 14 a of theembodiments functions as one example of “first charge circuit”. Thepower-supply positive terminal 33 functions as one example of “chargeterminal”, and the power-supply negative terminal 43 and the commonground terminal 48 function as “discharge terminals”. The fourth andfifth transistors 4 a, 5 a of the gate charge circuit 14 a function as“charge switch” of the first charge circuit. The “charge switch” of thefirst charge circuit is not limited to the fourth and fifth transistors4 a, 5 a, provided that it is a switch circuit that switches thedestination to which the electrode 16 b of the capacitor 16 isconnected, from the discharge terminal (the power-supply negativeterminal 43 or the common ground terminal 48) to the charge terminal(the power-supply positive terminal 33), in response to the drive signalVin1.

The gate charge circuit 14 b of the third embodiment functions as oneexample of “second charge circuit”. The fourth transistor 104 a of thegate charge circuit 14 b functions as one example of “charge switch” ofthe second charge circuit. The “charge switch” of the second chargecircuit is not limited to the fourth transistor 104 a, provided that itprovides a switch circuit that switches the connecting state between thecharge terminal (power-supply positive terminal 32) and the first andsecond transistors 1 a, 2 a from the cutoff state to the conductingstate, in response to the drive signal Vin1.

In the drive units of the fourth to sixth embodiments, thevoltage-driven type P-channel first and second transistors 1 b, 2 b areemployed in the current mirror circuit. The current control circuit 22of the embodiments functions as one example of “current controlcircuit”, and the current source 27 functions as one example of “currentsource”. The gate discharge circuit 24 a of the embodiments functions asone example of “first discharge circuit”. The power-supply positiveterminal 33 functions as one example of “charge terminal”, and thepower-supply negative terminal 43 functions as one example of “dischargeterminal”. The fourth and fifth transistors 4 b, 5 b of the gatedischarge circuit 24 a function as one example of “discharge switch” ofthe first discharge circuit. The “discharge switch” of the firstdischarge circuit is not limited to the fourth and fifth transistors 4b, 5 b provided that it is a switch circuit that switches thedestination to which the electrode 26 b of the capacitor 26 isconnected, from the charge terminal (power-supply positive terminal 33)to the discharge terminal (power-supply negative terminal 43), inresponse to the drive signal Vin1. The power-supply positive terminal 39of the embodiments functions as one example of “electric power supplyterminal”.

The gate discharge circuit 24 b of the sixth embodiment functions as oneexample of “second discharge circuit”. The fourth transistor 104 b ofthe gate discharge circuit 24 b functions as one example of “dischargeswitch” of the second discharge circuit. The “discharge switch” of thesecond discharge circuit is not limited to the fourth transistor 104 bprovided that it provides a switch circuit that switches the connectingstate between the discharge terminal (power-supply negative terminal 42)and the first and second transistors 1 b, 2 b, from the cutoff state tothe conducting state, in response to the drive signal Vin1.

The phrase “in response to the drive signal” in the description of theembodiments means “in response to a trigger that dictates switching ofthe power transistor between ON and OFF”. A specific example of “inresponse to the drive signal” is “in response to a pulse edge of thedrive signal which switches the power transistor between ON and OFF”.

In the drive units of the illustrated embodiments, a switch circuitusing a current mirror circuit is disposed in one of a part of the driveunit between the output terminal 12 and the power-supply positiveterminal 31, and a part of the drive unit between the output terminal 12and the power-supply negative terminal 41, and a switch circuit thatconsists of one transistor (sixth transistor) is disposed in the otherof the above parts of the drive unit. A switch circuit using a currentmirror circuit may be disposed in each of the part of the drive unitbetween the output terminal 12 and the power-supply positive terminal31, and the part of the drive unit between the output terminal 12 andthe power-supply negative terminal 41.

While specific examples have been described in detail, these examplesare merely exemplary, and are not supposed to limit the appended claims.The technologies described in the claims include those into which theillustrated specific examples are modified or changed in variousmanners. Technical elements described in this specification or drawingsmay be used alone or in various combinations, to exhibit technicalusefulness, and are not limited to the combinations described in theclaims at the time of filing. Also, the technologies illustrated in thisspecification or drawings can achieve two or more objects at the sametime, and provide technical usefulness by achieving at least one ofthese objects.

What is claimed is:
 1. A drive unit that drives a transistor to bedriven, based on a drive signal, the drive unit comprising: a firsttransistor that is a voltage-driven type P-channel transistor, and has alow-potential-side electrode and a gate connected to each other; asecond transistor that is a voltage-driven type P-channel transistor,and has the same gate threshold voltage as the first transistor, thesecond transistor having a gate connected to the gate of the firsttransistor, and a high-potential-side electrode and a low-potential-sideelectrode to one of which a gate of the transistor to be driven isconnected; a current source connected to the low-potential-sideelectrode of the first transistor, the current source being adapted toallow constant current to pass therethrough; a current control circuitconfigured to control start of discharging of the gates of the firsttransistor and the second transistor using the current source, inresponse to the drive signal; and a gate discharge circuit thatdischarges the gates of the first transistor and the second transistor,separately from the current source, wherein: the gate discharge circuitincludes configuration of a first discharge circuit; the first dischargecircuit includes a capacitor having one electrode connected to the gatesof the first transistor and the second transistor, a charge terminalthat supplies electric power to another electrode of the capacitor, adischarge terminal that discharges electric power from the otherelectrode of the capacitor, and a charge switch configured to switch adestination to which the other electrode of the capacitor is connected,from the charge terminal to the discharge terminal, in response to thedrive signal; the first discharge circuit satisfies a relationship ofdVcg·Ccm/(Ccg+Ccm)≥VLref, where VLref is an input terminal voltage ofthe current source when the constant current flows between thehigh-potential-side electrode and the low-potential-side electrode ofthe first transistor, Ccg is a capacitance of the capacitor, Ccm is atotal capacitance of gate capacitances of the first transistor and thesecond transistor, and dVcg is a voltage difference between an electricpower supply terminal that supplies electric power to the gates of thefirst transistor and the second transistor, and the discharge terminal.2. The drive unit according to claim 1, wherein the gate dischargecircuit is the first discharge circuit, and satisfies a relationship ofVth≥dVcg·Ccm/(Ccg+Ccm), where Ccg is the capacitance, Ccm is the totalcapacitance, dVcg is the voltage difference, and Vth is a gate thresholdvoltage of the first transistor and the second transistor.
 3. The driveunit according to claim 1, further comprising a cutoff switch configuredto cut off current flowing between the high-potential-side electrode andthe low-potential-side electrode of the first transistor after the firsttransistor and the second transistor switch from OFF to ON.
 4. The driveunit according to claim 3, wherein the cutoff switch has a drainconnected to a power-supply negative terminal of the drive unit, and asource connected to an output terminal of the drive unit via a resistor.